As Si has faced physical limits on further scaling down, novel semiconducting materials such as 2D transition metal dichalcogenides and oxide semiconductors (OS) have gained tremendous attention to continue the ever-demanding downscaling represented by Moore's law. Amongst, OS is considered to be the most promising alternative material because it has intriguing features such as modest mobility, extremely low off-current, great uniformity, and low temperature processibility with conventional complementary metal oxide semiconductor-compatible methods. In practice, OS has successfully replaced hydrogenated amorphous Si in high-end liquid crystal display devices and has now become a standard backplane electronic for organic light-emitting diode displays despite the short time since their invention in 2004. For OS to be implemented in next generation electronics such as back-end-of-line transistor applications in monolithic three-dimensional integration beyond the display applications, however, there is still much room to be studied such as high mobility, imune short-channel effects, and low electrical contact properties etc. This study reviews the brief history of OS and recent progress in device applications from a material science and device physics point of view. Simultaneously, remaining challenges and opportunities in OS for use in next generation electronics are discussed. This article is protected by copyright. All rights reserved.

Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips.

With the increasing power density and reduced size of the GaN-based electronic power converters, the heat dissipation in the devices becomes the key issue toward the real applications. Diamond, wit...

Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material characteristics, including its high critical electric field, high saturation velocity, high electron mobility, and outstanding thermal stability. Therefore, the superior performance is represented by GaN-based high electron mobility transistor (HEMT) devices. They can perform at higher currents, voltages, temperatures, and frequencies, making them suitable devices for the next generation of high-efficiency power converter applications, including electric vehicles, phone chargers, renewable energy, and data centers. Thus, this review article will provide a basic overview of the various technological and scientific elements of the current GaN HEMTs technology. First, the present advancements in the GaN market and its primary application areas are briefly summarized. After that, the GaN is compared with other devices, and the GaN HEMT device’s operational material properties with different heterostructures are discussed. Then, the normally-off GaN HEMT technology with their different types are considered, especially on the recessed gate metal insulator semiconductor high electron mobility transistor (MISHEMT) and p-GaN. Hereafter, this review also discusses the reliability concerns of the GaN HEMT which are caused by trap effects like a drain, gate lag, and current collapse with numerous types of degradation. Eventually, the breakdown voltage of the GaN HEMT with some challenges has been studied.

https://www.mdpi.com/2073-4352/12/11/1581/pdf?version=1667813642

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

Current collapse measurements have been performed for AlGaN/GaN high-electron-mobility transistors having identical breakdown voltages but with different field plate (FP) lengths. The results indicated that applying more positive ON-state gate biases resulted in pronounced recovery in the dynamic ON-resistance for the FP device, whereas no gate-bias effects were observed for the device without FP. The mechanism responsible for the reduced current collapse by FP is proposed, in which the key role is played during ON-state by the quick field-effect recovery of partial channel depletion caused by electron trapping at AlGaN surface states between gate and drain.

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.

In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

http://addi.ehu.es/bitstream/10810/59317/1/Rev-2022-Intl%20J%20of%20Energy%20Research%20-%20Robles%20-%20The%20role.pdf

The role of power device technology in the electric vehicle powertrain

Recent Advances in GaN‐Based Power HEMT Devices

We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6 V with negligible influence on the threshold voltage and on-resistance. Time-dependent gate breakdown measurements reveal that the maximum gate drive voltage increases from 6.2 to 10.6 V for a 10-year lifetime with a 1% gate failure rate. This method effectively expands the operating voltage margin of the p-GaN gate HEMTs without any other additional process steps.

Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering

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Recent Advances in GaN‐Based Power HEMT Devices

Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering