Tunable semiconductor lasers have been listed in numerous critical technology lists for future optical communication and sensing systems. This paper summarizes a tutorial that was given at OFC '03. It includes some discussion of why tunable lasers might be beneficial, an outline of basic tuning mechanisms, some examples of tunable lasers that have been commercialized, and a discussion of control techniques. More extensive data is given for the widely-tunable sampled-grating distributed-Bragg-reflector (SGDBR) type of laser, including data for such lasers integrated monolithically with modulators to form complete transmitter front ends. A summary of reliability data for the SGDBR laser is also given. It is concluded that tunable lasers can reduce operational costs, that full-band tunability is desirable for many applications, that monolithic integration offers the most potential for reducing size, weight, power and cost, and that sufficient reliability for system insertion has been demonstrated.

/pdf/tunable-semiconductor-lasers-a-tutorial-u60opvuxtv.pdf

Tunable semiconductor lasers: a tutorial

The microprocessor architecture transition from multi-core to many-core will drive increased chip-to-chip I/O bandwidth demands at processor/memory interfaces and in multi-processor systems. Future architectures will require bandwidths of 200GB/s to 1.0TB/s and will bring about the era of tera-scale computing. To meet these bandwidth demands, traditional electrical interconnect techniques require increases in circuit complexity and costlier materials. However, without lower loss electrical interconnects, this method of increasing I/O bandwidth in electrical links eventually comes at the cost of reducing interconnect link length, reducing signal integrity or increasing power consumption. Optical interconnect with its terahertz bandwidth, low loss, and low cross-talk has been proposed to replace electrical interconnect between chips [1]. This paper describes results for both near and long-term chip-to-chip optical interconnect architectures.

Optical I/O technology for tera-scale computing

The vertical-cavity surface-emitting laser (VCSEL) has become a light source of great importance for industrial and consumer applications. This includes communication and sensing in particular, where dynamics and optical mode behavior are key performance characteristics. This tutorial treats relevant VCSEL basics, performance requirements and recent progress toward higher speed, higher single-mode power, and polarization control.

Advances in VCSELs for Communication and Sensing

This paper describes both a near term and a long term optical interconnect solution, the first based on a packaging architecture and the second based on a monolithic photonic CMOS architecture. The packaging-based optical I/O architecture implemented with 90 nm CMOS transceiver circuits, 1 × 12 VCSEL/detector arrays and polymer waveguides achieves 10 Gb/s/channel at 11 pJ/b. A simple TX pre-emphasis technique enables a potential 18 Gb/s at 9.6 pJ/b link efficiency. Analysis predicts this architecture to reach less than 1 pJ/b at the 16 nm CMOS technology node. A photonic CMOS process enables higher bandwidth and lower energy-per-bit for chip-to-chip optical I/O through integration of electro-optical polymer based modulators, silicon nitride waveguides and polycrystalline germanium (Ge) detectors into a CMOS logic process. Experimental results for the photonic CMOS ring resonator modulators and Ge detectors demonstrate performance above 20 Gb/s and analysis predicts that photonic CMOS will eventually enable energy efficiency better than 0.3 pJ/b with 16 nm CMOS. Optical interconnect technologies such as these using multi-lane communication or wavelength division multiplexing have the potential to achieve TB/s interconnect and enable platforms suitable for the tera-scale computing era.

Vertical-cavity surface-emitting lasers (VCSELs) are the ideal optical sources for data communication and sensing. In data communication, large data rates combined with excellent energy efficiency and temperature stability have been achieved based on advanced device design and modulation formats. VCSELs are also promising sources for photonic integrated circuits due to their small footprint and low power consumption. Also, VCSELs are commonly used for a wide variety of applications in the consumer electronics market. These applications range from laser mice to three-dimensional (3D) sensing and imaging, including various 3D movement detections, such as gesture recognition or face recognition. Novel VCSEL types will include metastructures, exhibiting additional unique properties, of largest importance for next-generation data communication, sensing, and photonic integrated circuits.

https://depositonce.tu-berlin.de/bitstream/11303/13913/1/Liu_etal_2021.pdf

Vertical-cavity surface-emitting lasers for data communication and sensing

We have developed 1.1-μm-range high-speed VCSELs based on InGaAs-QWs for high-speed and highly reliable optical interconnections. 3-dB bandwidth up to 20 GHz and error-free 30-Gbps 100 m operations were demonstrated with oxide confined VCSELs. We also developed buried tunnel junction VCSELs to further improve the relaxation oscillation frequency limit. 3-dB bandwidth up to 24 GHz and error-free 40-Gbps operations were demonstrated with these VCSELs.

High-speed 1.1-μm-range InGaAs VCSELs

VCSELs with a conventional oxide-confined structure have problems to be solved for the purpose of reducing the internal stress and thermal resistance of the device. In particular, the problems should be solved in order to achieve the high reliability of the high-speed modulation-type VCSELs. A surface emitting laser according to an embodiment of the present invention comprising a single current injection opening area, which is provided in a mesa and electrically and optically isolated, wherein the laser comprises: an active layer for emitting light resulted from current injection; a first reflector and a second reflector provided so as to sandwich the active layer between the reflectors, an n electrode and a p electrode for injecting current into the active layer, an ion-implanted nonconductive high-resistance area provided so as to surround the current injection opening area, and a half cross section in which the nonconductive oxidized layer does not appear is present among radial half cross sections extending from a substantial center of the current injection opening area to an outer periphery of the surface emitting laser, which cross sections are interrupted within a region where a laser emitting light is present.

Surface emitting laser

We report on the first demonstrated near-complete coverage of the S-, C-, and L-bands using six different ranges of wavelength-selectable microarray light sources (WSLs) based on a distributed-feedback (DFB) laser diode (LD) array. The six devices were fabricated on only two wafers. Each device has a tuning range of more than 15 nm, a sidemode suppression ratio of over 40 dB, and a fiber-coupled power greater than around 10 mW.

Wavelength-selectable microarray light sources for S-, C-, and L-band WDM systems

In this work, 11-/spl mu/m-range VCSELs based on InGaAs/GaAs quantum wells with high modulation bandwidth up to 20 GHz were developed Error-free 25-Gbps operations were achieved for the first time using directly modulated multimode VCSELs

25-Gbps operation of 1.1-/spl mu/m-range InGaAs VCSELs for high-speed optical interconnections

1.1 mum-range high-speed oxide-VCSELs with InGaAs/GaAsP strain-compensated multiple quantum wells (MQWs) have been developed. 25Gbit/s 100degC operation and high reliability over 3000 h under 150degC were demonstrated.

25 Gbit/s 100°C operation of highly reliable InGaAs/GaAsP-VCSELs

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