Silicon wafer thinning is mostly performed by the method of self-rotating grinding. In grinding, the grinding force is a crucial factor of affecting the grinding performance, form accuracy and surface/subsurface thinning quality. To control the thinning quality of ground wafer, grinding force is the most essential factor need to be controlled. However, no theoretical model is developed to correlate grinding parameters to grinding force yet. In this article, a theoretical model is established based on the removal behavior of silicon, including cutting and sliding. For the first time, the effects of processing parameters, wafer radial distance and crystal orientation on grinding force are quantitatively described in a theoretical model. Excess grinding force causes local damage of wafer in the form of subsurface cracks, as a determinant factor on the quality of wafer. Therefore, nine sets of self-rotating grinding experiments with variable processing parameters are performed, and the depth of subsurface cracks h are measured to evaluate the damage of ground wafer. Based on the scratching theory of single abrasive grain, the relationship between h and the normal grinding force Fnt is found, which is also validated by the experimental results. Finally, an optimized two-stage process is proposed to control subsurface cracks and improve material removal rate simultaneously, according to the predictive model of grinding force.

A predictive model of grinding force in silicon wafer self-rotating grinding

Analytical prediction for depth of subsurface damage in silicon wafer due to self-rotating grinding process

Silicon wafers are the most extensively used material for integrated circuit (IC) substrates. Before taking the form of a wafer, a single crystal silicon ingot must go through a series of machining processes, including slicing, lapping, surface grinding, edge profiling, and polishing. A key requirement of the processes is to produce extremely flat surfaces on work pieces up to 350 mm in diameter. A total thickness variation (TTV) of less than 15 μm is strictly demanded by the industry for an 0.18 μm IC process. Furthermore, the surfaces should be smooth (Ra<10 nm) and have minimum subsurface damage (<10 μm) before the final etching and polishing. The end product should have crack-free mirror surfaces with a micro-roughness less than 1.8 A. In this paper, experiments are conducted to investigate the effects of various parameters on the subsurface damage of ground silicon wafers.

/pdf/surface-integrity-of-silicon-wafers-in-ultra-precision-d6aqiwaxyz.pdf

Surface integrity of silicon wafers in ultra precision machining

Ultrathin silicon wafer technology is reviewed in terms of the semiconductor applications, critical challenges, and wafer pre-assembly and assembly process technologies and their underlying mechanisms. Mechanical backgrinding has been the standard process for wafer thinning in the semiconductor industry owing to its low cost and productivity. As the thickness requirement of wafers is reduced to below 100 μm, many challenges are being faced due to wafer/die bow, mechanical strength, wafer handling, total thickness variation (TTV), dicing, and packaging assembly. Various ultrathin wafer processing and assembly technologies have been developed to address these challenges. These include wafer carrier systems to handle ultrathin wafers; backgrinding subsurface damage and surface roughness reduction, and post-grinding treatment to increase wafer/die strength; improved wafer carrier flatness and backgrinding auto-TTV control to improve TTV; wafer dicing technologies to reduce die sidewall damage to increase die ...

Ultrathin Wafer Pre-Assembly and Assembly Process Technologies: A Review

Novel method to investigate the critical depth of cut of ground silicon wafer

The grain depth-of-cut in plunge grinding was analyzed using computer simulation and an analytic model. Two regimes were identified for the depth-of-cut as a function of the infeed. At lower infeeds, there is a unique correlation between grinding grooves and cutting grains, and the depth-of-cut is equal to the infeed. At higher infeeds, the correlation is destroyed, and the depth-of-cut can be much less than the infeed. An analytic model that takes into account only the mean surface position while ignoring the surface profile can describe the latter regime.

Analysis of the grain depth-of-cut in plunge grinding

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Analysis of the grain depth-of-cut in plunge grinding