The reaction chemistry of H-terminated crystalline Si(111) and Si(100) surfaces in CH3OH, CD3OD, CF3(CH2)3OH, C4H9OH, and C4D9OD solutions containing ferrocenium (Fc+)−BF4, I2, or Br2 was monitored using X-ray photoelectron (XP) spectroscopy and infrared (IR) spectroscopy. Addition of the one-electron oxidant Fc+, or addition of the oxidizing species I2 or Br2, produced diagnostic changes in the IR spectra that clearly indicated formation of surficial Si−OR groups. XPS data confirmed the conclusions of the IR studies. Under our reaction conditions, no detectable reaction occurred without the presence of the oxidant. The data are consistent with oxidative activation of the surficial Si−H bonds toward nucleophilic attack by the alcohols. The reaction chemistry was generally similar on (111)- and (100)-oriented Si surfaces, although some differences were observed in the ratio of reaction products on the two different surface orientations. Alkoxylated surfaces were also prepared by a two-step process in which...

Infrared and X-ray Photoelectron Spectroscopic Studies of the Reactions of Hydrogen-Terminated Crystalline Si(111) and Si(100) Surfaces with Br2, I2, and Ferrocenium in Alcohol Solvents

We demonstrate plasmonic lasing from metal–organic chemical vapor deposition (MOCVD)-grown GaAs–AlGaAs core–shell nanowires (NWs) with subdiffraction limit diameters of ∼150 nm placed directly on a silver thin film. The absence of a low-index dielectric spacer layer between the NW and the metal layer allows for surface plasmon polariton (SPP) lasing using a nonhybridized plasmonic mode. Unlike previously reported plasmonic NW lasers using the fundamental SPP mode, we demonstrate for the first time plasmonic NW lasing under pulsed optical excitation by using the higher order SPP mode. The higher order mode allows us to alleviate the high losses associated with the fundamental plasmonic mode. We observed lasing at temperatures up to 125 K. Our demonstration of a plasmonic laser based on GaAs emitting in the near-infrared region will be useful for the on-chip integration of nanophotonic and electronic devices and the development of GaAs-based plasmonic devices.

Low-Threshold near-Infrared GaAs–AlGaAs Core–Shell Nanowire Plasmon Laser

Geochemical characteristics of monazite sands of Chhatrapur beach placer deposit were studied by proton induced X-ray emission and energy dispersive X-ray fluorescence methods. The average concentrations of ThO 2 and UO 2 are found to be 10.18 and 0.26 wt.%, respectively. The average rare-earth elements (REE) content is 56.75 wt.% and they are rich in La, Ce and Nd. The most characteristic feature common to all monazites is that the total REE content exceeds that of the actinides (U + Th). The chondrite-normalized REE distribution patterns of monazite grains shows uniformly enriched light rare-earth element, which could be due to the preferential incorporation of lighter lanthanides. These monazite sands are derived from the granulite facies of metamorphic rocks such as khondalites and charnockites from Eastern Ghats Group of rocks.

Geochemical studies of monazite sands of Chhatrapur beach placer deposit of Orissa, India by PIXE and EDXRF method

http://liquids.seas.harvard.edu/alexey/pdfs/bokhonov00.pdf

In situ investigation of stage of the formation of eutectic alloys in Si–Au and Si–Al systems

A new bonding technique is proposed by using localized heating to supply the bonding energy. Heating is achieved by applying a dc current through micromachined heaters made of gold which serves as both the heating and bonding material. At the interface of silicon and gold, the formation of eutectic bond takes place in about 5 minutes. Assembly of two substrates in microfabrication processes can be achieved by using this method. In this paper the following important results are obtained: 1) Gold diffuses into silicon to form a strong eutectic bond by means of localized heating. 2) The bonding strength reaches the fracture toughness of the bulk silicon. 3) This bonding technique greatly simplifies device fabrication and assembly processes.

https://iopscience.iop.org/article/10.1143/JJAP.37.L1412/pdf

Formation of Silicon-Gold Eutectic Bond Using Localized Heating Method

Cu thin films have been deposited on Si(111) substrates with two different initial conditions. In one, the substrates had a top native oxide layer, and in the other the native oxide layer was etched in hydrofluoric acid and the etched surface was treated with a bromine-methanol solution prior to the surface being exposed to atmosphere. This Br-treatment is known to saturate surface dangling bonds on an Si(111) surface. Vacuum annealing of the Cu/Si samples, followed by Rutherford backscattering spectrometry (RBS) measurements showed the onset temperature of interdiffusion to be ∼ 220°C for the Si(111) substrate treated with bromine-methanol solution whereas the onset temperature of interdiffusion was found to be between 600°C and 700°C for Si(111) surfaces with native oxide on top. This shows that the native oxide layer works like a diffusion barrier. The effect of an interposed TiNx layer on the diffusion behaviour has also been investigated. A thin layer ( 600°C) for the Cu/SiO2/Si(111) suggests that SiO2 introduces the highest barrier for Cu-Si interdiffusion among all the barrier combinations studied here. At annealing temperatures above the onset temperature of interdiffusion copper silicides are formed. RBS simulations have been used to study the compositions of the reacted films.

An RBS study of interdiffusion across a brominated Si( 111) /Cu interface with and without a barrier layer

The thermal annealing behaviour of Cu thin films deposited on Si(100) and Si(111) substrates has been studied by Rutherford backscatteringspectrometry (RBS). For thin film deposition, two different initial conditions of the substrates have been used. In one, the substrates had a top native oxide layer, and in the other the native oxide layer was etched in hydrofluoric acid and treated with a bromine-methanol solution without the surface being exposed to atmosphere. RBS measurements on the Cu/Si samples showed the onset temperature of interdiffusion to be ≈ 300°C for the Si(111) substrate treated with bromine-methanol solution, whereas the onset temperature of interdiffusion was found to be between 500 and 700°C for both Si(111) and Si(100) surfaces with native oxide on top and Si(100) surface treated with bromine-methanol solution. The difference in behaviour for the bromine treated Si(111) and Si(100) substrates can be explained in terms of preferential saturation of Si dangling bonds by Br on the Si(111) surfaces. The onset temperature of interdiffusion for the Br-treated Si(111) surfaces is comparable to that for the atomically clean Si(111)7 × 7 reconstructed surfaces prepared in ultrahigh-vacuum (UHV) condition.

An RBS study on the annealing behaviour of Cu thin films on brominated Si(111) and Si(100) substrates

X-ray photoelectron spectroscopic study of Si(111) and Si(100) surfaces with chemically adsorbed bromine

Epitaxial growth of silver on Br-passivated Si(111) substrates under high vacuum

Epitaxy driven fractal growth

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