https://hal.archives-ouvertes.fr/hal-02459266/document

Atomistic simulations of focused ion beam machining of strained silicon

Realizing surface wettability tuning at the submicron-scale resolution is expected to enable the fabrication of micro/nano-structured fluidic devices and is particularly important in nanobiotechnology and high-resolution printing. Herein, we propose an approach to modify the wettability of self-assembled monolayer surfaces using focused ion beam (FIB) irradiation. The contact angle of the irradiated region changed from hydrophobic to hydrophilic by increasing the ion dosage. The chemical composition and associated depth profile of the sample surfaces were analyzed by glow discharge–optical emission spectroscopy. The results indicated that the content of fluorine at the surface decreased after FIB irradiation of the samples. A submicron-scale hydrophobic–hydrophilic hybrid surface was then fabricated by forming hydrophilic dots with diameters of ∼110 nm on a hydrophobic surface by FIB irradiation. The difference in wettability of the hydrophobic and hydrophilic areas on the surface was confirmed by microsc...

Tuning Surface Wettability at the Submicron-Scale: Effect of Focused Ion Beam Irradiation on a Self-Assembled Monolayer

Surface nanobubbles forming on hydrophobic surfaces in water present an exciting opportunity as potential agents of top-down and bottom-up nanopatterning. The formation and characteristics of surface nanobubbles are strongly influenced by the physical and chemical properties of the substrate. In this study, focused ion beam (FIB) milling is used for the first time to spatially control the nucleation of surface nanobubbles with 75 nm precision. The spontaneous formation of nanobubbles on alternating lines of a self-assembled monolayer (octadecyltrichlorosilane) patterned by FIB is detected by atomic force microscopy. The effect of chemical vs topographical surface heterogeneity on the formation of nanobubbles is investigated by comparing samples with OTS coating applied pre- vs post-FIB patterning. The results confirm that nanoscale FIB-based patterning can effectively control surface nanobubble position by means of chemical heterogeneity. The effect of FIB milling on nanobubble morphology and properties, including contact angle and gas oversaturation, is also reported. Molecular dynamics simulations provide further insight into the effects of FIB amorphization on surface nanobubble formation. Combined experimental and simulation investigations offer insights to guide future nanobubble-based patterning using FIB milling. 

pdf/nanoscale-patterning-of-surface-nanobubbles-by-focused-ion-3o9xglsx5l.pdf

Nanoscale Patterning of Surface Nanobubbles by Focused Ion Beam

In this paper, experiments and molecular dynamic simulation are performed to investigate the crystal orientation-dependent effects in a focused ion beam (FIB) sputtering etching process on silicon crystal planes. The experimental results indicate that different silicon orientation planes have different etched profiles, aspect ratios on microstructures, and sputtering yields under the same process conditions, which brings difficulty in deciding the process parameters for the fabrication of high-resolution nanostructures. Molecular dynamic simulation based on empirical potential is carried out to explain this effect on an atomic scale. The sputtered profiles of different silicon crystal planes after hundreds of impacts by Ga+ ions are analyzed. Both the simulation and experimental results show that with the same FIB etching conditions, structures on an Si (111) plane have the maximum opening width and minimum depth. Compared with the etched profile on an Si (100) plane, trenches on Si (110) have a smaller width, but greater depth. The Si (111) plane has the minimum sputtering yield. Furthermore, simulation results on the distribution of Ga+ ions remaining inside the substrate, number of ions sputtered out of the surface, and common neighbor analysis (CNA) can explain the orientation-dependent effect during FIB sputtering etching.

Molecular dynamic simulation of orientation-dependent effect on silicon crystalline during sputtering process of focused ion beam

Characterizing interface structure between crystalline and ion bombarded silicon by transmission electron microscopy and molecular dynamics simulations

Molecular dynamics (MD) simulations of 30 keV accelerated Ga ions has been carried out, colliding with a Si surface. Using this procedure the amorphous structural region of the Si was found to expand with the progression of the interface region, that lie between the amorphous structure and the crystalline structure, as fluence increased in the depth direction. The height of the structure is increased and has a peak value around 1.6 × 1015 ion/cm2, the height becomes the negative value beyond the peak, that is, the phenomenon changes from a deformation to a remove. The tendency of distribution for height and depth is a good agreement with an experimental data.

Molecular dynamics simulation of Ga+ ion collision process

We investigate bifurcations of periodic solutions observed in the forced Wilson-Cowan neuron pair by both the brute-force computation and the shooting method. By superimposing the results given by both methods, a detailed topological classification of periodic solutions is achieved that includes tori and chaos attractors in the parameter space is achieved. We thoroughly explore the parameter space composed of threshold values, amplitude, and angular velocity of an external forcing term. Many bifurcation curves that are invisible when using brute-force method are solved by the shooting method. We find out a typical bifurcation structure including Arnold tongue in the angular velocity and the amplitude of the external force parameter plane, and confirm its fractal structure. In addition, the emergence of periodic bursting responses depending on these patterns is explained. 

Bifurcations in a forced Wilson-Cowan neuron pair

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Molecular dynamics simulation of Ga+ ion collision process

Bifurcations in a forced Wilson-Cowan neuron pair