K. Mahadeva Bhat
Solid State Physics Laboratory
15 Papers
12 Citations
K. Mahadeva Bhat is an academic researcher from Solid State Physics Laboratory. The author has contributed to research in topics: Ohmic contact & High-electron-mobility transistor. The author has an hindex of 4, co-authored 15 publications. Previous affiliations of K. Mahadeva Bhat include University of California, Davis.
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Papers
Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer
Saptarshi Mandal,Anchal Agarwal,Elaheh Ahmadi,K. Mahadeva Bhat,Dong Ji,Matthew A. Laurent,Stacia Keller,Srabanti Chowdhury +7 more
TL;DR: In this article, a GaN-based current aperture vertical electron transistor (CAVET) with a p-type gate layer and an implantation based current blocking structure is presented.
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Ohmic contacts to pseudomorphic HEMTs with low contact resistance due to enhanced Ge penetration through AlGaAs layers
G. Sai Saravanan,K. Mahadeva Bhat,K. Muraleedharan,H. P. Vyas,Rangarajan Muralidharan,Anand P. Pathak +5 more
TL;DR: In this article, the authors have performed alloying experiments in the temperature range of 390 −450 °C, and the contact resistance was determined using transfer length method measurements, and they have observed that doping of the channel by germanium is possible even at lower temperatures.
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MESFET process based planar schottky diode and its application to passive power limiters
Sandeep Chaturvedi,G. Sai Saravanan,K. Mahadeva Bhat,Sangam Bhalke +3 more
- 01 Dec 2013
TL;DR: A planar Schottky diode which is process compatible with general planar MESFET process is described in this article, where the device geometry has been designed and optimized keeping in view the applications up to Ku-band.
10
Evolution of surface morphology of alloyed AuGe/Ni/Au ohmic contacts to GaAs microwave FETs
G. Sai Saravanan,K. Mahadeva Bhat,S. Dhamodaran,Anand P. Pathak,Rangarajan Muralidharan,H. P. Vyas,D.V. Sridhara Rao,R. Balamuralikrishnan,K. Muraleedharan +8 more
TL;DR: In this article, a model involving the phenomena of coalescence and outdiffusion occurring simultaneously was proposed to explain the evolution of surface morphology of the contact surface of an AuGe/Ni/Au ohmic contact.
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Influence of activation of Si 29+ ion-implantation in GaAs on ohmic contact resistance and electrical performances of MESFETs
TL;DR: In this article, an experimental correlation between the ohmic contact resistance (R c) and activation of both the n+ and channel layers of MESFETs was found.
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