An optical receiver with voltage-controlled transimpedance using a current conveyor and a voltage amplifier monolithically integrated with a PIN photodiode in 0.6 mum BiCMOS technology is presented. The transimpedance is directly proportional to a voltage-controlled resistance, and can be continuously varied by changing its control voltage. Thanks to the mixed current-mode and voltage-mode signal processing, the bandwidth of the optical receiver is virtually independent of the photodiode capacitance. A linearity error smaller than 3.1%, a sensitivity dynamic range of 78.8 (37.9 dB) with the largest sensitivity of S = 890 mV/muW at 660 nm, an offset voltage smaller than 0.53 mV, a largest maximum power consumption of only 3.2 mW, a small-signal frequency bandwidth up to 189 MHz, a large-signal rise time/fall time down to 3.7 ns/3.3 ns, and an output noise level down to -77.8 dBm (for a frequency of 50 MHz and a resolution bandwidth of 30 kHz) are achieved.

Low-Power BiCMOS Optical Receiver With Voltage-Controlled Transimpedance

Today's new "electronic" products are increasingly relying on a combination of electrical, optical, mechanical, and biochemical technologies for smaller size, higher levels of integration, enhanced performance, and versatility based on D. Cristea et al. (2000) and H.H. Kim et al. (1994). The last decade has seen the invention, refinement, and volume production of compact, high-performance silicon-based photoreceivers. Consisting of a photodetector (PD) and an amplifier, photoreceivers or photodetector integrated circuits (PDICs) are currently in great demand for the optical communication, optical sensory, and optical storage sectors. These key markets are driving the rapid commercialization of optical and silicon-based semiconductor technologies. The industry has been experiencing explosive sales in CD/DVD systems and is gearing up for a progressive increase in market size with the recent introduction of the BD system prototypes. The optical storage market is driving the demand for photoreceivers built in a CMOS or BiCMOS technology. In time, the BD system will most likely replace the CD and current DVD systems. However, for the foreseeable future, the standard for BD systems will require that they be able to read the 650-nm DVDs and 780-nm CDs. Today, the PIN photodiode principles of operation are fairly well understood, and the process methods for designing them have been thoroughly researched throughout this past decade. Novel process structures are conceivable in the future, but one is most likely to see new process integration schemes, photodiode design layouts, and amplifier circuit architectures.

https://ieeexplore.ieee.org/iel5/101/28553/01276177.pdf

What's in store for silicon photoreceivers?

An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs) or optoelectronic integrated circuits (OEICs) for optical storage systems (OSS) and fiber receivers is given. It is demonstrated, that by us- ing low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OE- ICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF) as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

Advances in Radio Science

A monolithically integrated optical receiver with voltage-controlled sensitivity in 0.6-m BiCMOS technology is presented. The transimpedance variations are achieved by varying the control voltage of the voltage-controlled resistor changing its equivalent resistance. The optical receiver design is based on a P-intrinsic-N photodiode and on a mixed current-mode and voltage-mode approach, by using a current conveyor and a voltage amplifier. Thanks to the current-mode signal processing, the bandwidth of the optical receiver is independent of the photodiode capacitance. A linearity error smaller than 2.92%, a sensitivity dynamic range of 83.2 (38.4 dB), an offset voltage smaller than 0.56 mV, a power consumption less than 4.7 mW, and a bandwidth up to 205.5 MHz are achieved.

Optical Receiver With Widely Tunable Sensitivity in BiCMOS Technology

With the rapid development of technology and the expansion of the information age, self-powered systems are gradually emerging. Triboelectric nanogenerators (TENGs), coupling contact electrification and electrostatic induction, can realize continuous power supplied for small devices by converting energy. Traditional TENGs mainly used organic polymer insulators as triboelectric materials, which are limited by low current density alternating current. Recently, many different semiconductor material systems, especially gallium nitride (GaN), have been tried for better electric output performance or more application potential due to their high current density direct current, which can improve the output performance and mechanical properties of TENGs and have important application value at the forefront of portable electronic devices, Internet of things, environmental and infrastructural monitoring, medical science, security, and other fields. In this review, we summarize the latest research achievements and progress on TENGs with different semiconductor structures, including metal–semiconductor TENGs, semiconductor–semiconductor TENGs, metal–insulator–semiconductor TENGs, and liquid–semiconductor TENGs. On the basis of the current TENG theory of tribovoltaic effect, the generation mechanism and performance of each TENG was represented. Direct-current TENGs based on semiconductor structure show great promise for self-powered electronic devices. 

Direct-Current Triboelectric Nanogenerators Based on Semiconductor Structure

A new BiCMOS OEIC for advanced optical storage systems with enhanced bandwidths is presented. The photodiode and the amplifier are monolithically integrated on the same substrate of a standard BiCMOS process. The OEIC has a -3 dB-bandwidth of 147 MHz. Furthermore a monolithically integrated pin-photoreceiver in CMOS-technology capable of 622 Mbit/s at a single power supply of only 2.5V is introduced.

http://ieeexplore.ieee.org/iel5/9918/31527/01471180.pdf

Advanced CMOS and BiCMOS photonic receiver ICs

Silicon-based optical receivers in BiCMOS technology for advanced optoelectronic integrated circuits

An innovative high speed optoelectronic integrated circuit (OEIC) consisting of a double photodiode and a transimpedance amplifier is described. The receiver shows rise and fall times of less than 1 ns which are sufficient for data rates in excess of 531 MBit/s. The circuit is realized in standard 0.8 μm BiCMOS technology and can be applied in optical interconnects and in short range optical data links.

BiCMOS Receiver OEIC for Optical Interconnects

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Advanced CMOS and BiCMOS photonic receiver ICs

Silicon-based optical receivers in BiCMOS technology for advanced optoelectronic integrated circuits

BiCMOS Receiver OEIC for Optical Interconnects