Current issues of numerical modeling of crystalline silicon solar cells are reviewed. Numerical modeling has been applied to Si solar cells since the early days of computer modeling and has recently become widely used in the photovoltaics (PV) industry. Simulations are used to analyze fabricated cells and to predict effects due to device changes. Hence, they may accelerate cell optimization and provide quantitative data e.g. of potentially possible improvements, which may form a base for the decision making on development strategies. However, to achieve sufficiently high prediction capabilities, several models had to be refined specifically to PV demands, such as the intrinsic carrier density, minority carrier mobility, recombination at passivated surfaces, and optical models. Currently, the most unresolved issue is the modeling of the emitter layer on textured surfaces, the hole minority carrier mobility, Auger recombination at low dopant densities and intermediate injection levels, and fine-tuned band parameters as a function of temperature. Also, it is recommended that the widely used software in the PV community, PC1D should be extended to Fermi-Dirac statistics.

Models for numerical device simulations of crystalline silicon solar cells--a review

Fully coupled dynamic electro-thermal simulation on chip and circuit level is presented. Temperature dependent thermal conductivity of silicon is taken into account, thus solving the nonlinear heat diffusion equation. The numerical solution is carried out by using the industry-standard simulator SABER, therefore for electro-thermmal simulations we are able to use the common electrical compact models by adding a heatsource and thermal pins to them. The application of this technique and need for electro-thermmal simulation is illustrated with the simulation of a current control circuit built into a multiwatt package.

Fully coupled dynamic electro-thermal simulation

We give an algorithm for triangulating n-vertex polygonal regions (with holes) so that no angle in the final triangulation measures more than p/2. The number of triangles in the triangulation is only O(n), improving a previous bound of O(n2), and the worst-case running time is O(nlog2n). The basic technique used in the algorithm, recursive subdivision by disks, is new and may have wider application in mesh generation. We also report on an implementation of our algorithm.

/pdf/linear-size-nonobtuse-triangulation-of-polygons-2i88fbjc7z.pdf

Linear-size nonobtuse triangulation of polygons

Under one‐sun illumination, the highest energy conversion efficiencies of silicon solar cells are presently obtained with bifacially contacted n+p cells, where contact to the p‐type substrate is made via small openings in the rear passivating oxide. In this work, a state‐of‐the‐art 2‐dimensional (2D) semiconductor device simulator is applied to these devices in order to investigate the effects arising from the rear metallization scheme. The impact of various cell parameters [i.e., substrate resistivity, rear surface recombination model (flatband or surface band bending conditions), positive oxide charge density, capture cross section ratio] on the cell’s current‐voltage (I‐V) characteristics and the optimum rear contact spacing is investigated. The highly nonideal I‐V curves of rear point‐contacted high‐efficiency silicon solar cells made at the University of New South Wales (UNSW) are modeled with a high degree of accuracy. This is achieved by properly accounting for the complex recombination behavior at...

Two‐dimensional numerical optimization study of the rear contact geometry of high‐efficiency silicon solar cells

Substrate current effects in smart power ICs

Mesh generators must become more powerful to keep up with the growing sophistication of device simulators. The mesh generator MESHBUILD, which produces meshes with no obtuse angles for structures with reasonably complex geometries, is described. The overall number of mesh elements is reduced compared with similar mesh generators. MESHBUILD is suitable for use in automatic grid generation and includes an interactive graphics interface. Run times for complex examples are on the order of 1 min on a Sun-4 workstation. >

Automatic rectangle-based adaptive mesh generation without obtuse angles

To accurately predict the effects of self-heating in a power p-i-n diode, we have applied self-consistent device simulation using a thermodynamically rigorous electrothermal model [1] implemented in the device/circuit simulator Simul [2]. Results of steady-state and high-voltage turn-off simulations with external electrical and thermal circuit elements are presented comparing the isothermal and self-heating cases.

/pdf/simulation-of-self-heating-effects-in-a-power-p-i-n-diode-3ww08ak2k0.pdf

Simulation of Self-Heating Effects in a Power p-i-n Diode

The simulation of power semiconductor devices is faced with several problems that are not usually found in VLSI device modeling: the huge and often complicated structures, the interaction with external circuit environment, the effects of surface phenomena, etc The large variety of device structures and the lack of compact circuit models makes TCAD very important for the design and optimization of these devices >

TCAD in power device design and optimization

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Automatic rectangle-based adaptive mesh generation without obtuse angles

Simulation of Self-Heating Effects in a Power p-i-n Diode

TCAD in power device design and optimization