Properties of narrow gap cadmium-based compounds

Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation and thermal annealing are reported on. A complete annihilation of implantation-induced extended defects (dislocation loops), quasi-point defects and related donor centers was observed as a result of a two-stage arsenic activation annealing. A high degree of activation of implanted arsenic was achieved with the annealing. In some cases, the annealing was found to lead to the modification of the properties of the ‘base’ layers not affected by implantation due to activation of uncontrolled acceptor defects and resulting changes in the degree of electrical compensation.

Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Thermal stability of Atomic Layer Deposition Al 2 O 3 film on HgCdTe was investigated by Al 2 O 3 film post-deposition annealing treatment and Metal-Insulator-Semiconductor device low-temperature baking treatment. The effectiveness of Al 2 O 3 film was evaluated by measuring the minority carrier lifetime and capacitance versus voltage characteristics. After annealing treatment, the minority carrier lifetime of the HgCdTe sample presented a slight decrease. Furthermore, the fixed charge density and the slow charge density decreased significantly in the annealed MIS device. After baking treatment, the fixed charge density and the slow charge density of the unannealed and annealed MIS devices decreased and increased, respectively.

Thermal stability of atomic layer deposition Al2O3 film on HgCdTe

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Thermal stability of atomic layer deposition Al2O3 film on HgCdTe