In 2000, a seminal study predicted ferromagnetism above room temperature in diluted magnetic semiconductors and oxides, fuelling tremendous research activity that has lasted for a decade. Tomasz Dietl reviews the progress in understanding these materials over the past ten years, with a view to the future of semiconductor spintronics.

A ten-year perspective on dilute magnetic semiconductors and oxides

Over the last decade the search for compounds combining the resources of semiconductors and ferromagnets has evolved into an important field of materials science. This endeavour has been fuelled by continual demonstrations of remarkable low-temperature functionalities found for ferromagnetic structures of (Ga,Mn)As, p-(Cd,Mn)Te, and related compounds as well as by ample observations of ferromagnetic signatures at high temperatures in a number of non-metallic systems. In this paper, recent experimental and theoretical developments are reviewed emphasising that, from the one hand, they disentangle many controversies and puzzles accumulated over the last decade and, on the other, offer new research prospects.

pdf/ferromagnetism-in-semiconductors-and-oxides-prospects-from-a-4d0wq1w6tt.pdf

Ferromagnetism in Semiconductors and Oxides. Prospects from a Ten Years′ Perspective

Single-atom catalysts (SACs) with magnetic elements as the active center have been widely exploited for efficient electrochemical conversions Understanding the catalytic role of spin, and thus modulating the spin density of a single-atom center, is of profound fundamental interest and technological impact Here, we synthesized ferromagnetic single Co atom catalysts on TaS2 monolayers (Co1/TaS2) as a model system to explore the spin-activity correlation for the oxygen evolution reaction (OER) A single Co atom adsorbed at the hollow site (CoHS) with spin-polarized electronic states serves as the active site for OER, whose spin density can be regulated by its neighboring single Co site via tuning the Co loading Both experimental and theoretical results reveal the spin density-dependent OER activity that an optimal spin density of CoHS can be achieved with a neighboring hetero-single CoTa site (substitution of Ta by Co) for a superior OER performance, in contrast to a homo-single CoHS site, which creates an excessive spin density over vicinal CoHS An optimized spin density of CoHS results in an optimal binding energy of oxygen species for the OER Establishing the spin-activity correlation in SACs may create a descriptor for designing efficient magnetic SACs for renewable energy conversions

Tuning the Spin Density of Cobalt Single-Atom Catalysts for Efficient Oxygen Evolution.

Entanglement of the spin-orbit and magnetic order in multiferroic materials bears a strong potential for engineering novel electronic and spintronic devices. Here, we explore the electron and spin structure of ferroelectric alpha-GeTe thin films doped with ferromagnetic Mn impurities to achieve its multiferroic functionality. We use bulk-sensitive soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to follow hybridization of the GeTe valence band with the Mn dopants. We observe a gradual opening of the Zeeman gap in the bulk Rashba bands around the Dirac point with increase of the Mn concentration, indicative of the ferromagnetic order, at persistent Rashba splitting. Furthermore, subtle details regarding the spin-orbit and magnetic order entanglement are deduced from spin-resolved ARPES measurements. We identify antiparallel orientation of the ferroelectric and ferromagnetic polarization, and altering of the Rashba-type spin helicity by magnetic switching. Our experimental results are supported by first-principles calculations of the electron and spin structure.

/pdf/entanglement-and-manipulation-of-the-magnetic-and-spin-orbit-eahy3z2g7a.pdf

Entanglement and manipulation of the magnetic and spin-orbit order in multiferroic Rashba semiconductors.

The interplay of magnetic and semiconducting properties has been in the focus for more than a half of the century. In this introductory article we briefly review the key properties and functionalities of various magnetic semiconductor families, including europium chalcogenides, chromium spinels, dilute magnetic semiconductors, dilute ferromagnetic semiconductors and insulators, mentioning also sources of non-uniformities in the magnetization distribution, accounting for an apparent high Curie temperature ferromagnetism in many systems. Our survey is carried out from today's perspective of ferromagnetic and antiferromagnetic spintronics as well as of the emerging fields of magnetic topological materials and atomically thin 2D layers.

https://iopscience.iop.org/article/10.1088/1674-4926/40/8/080301/pdf

Families of magnetic semiconductors — an overview

Growth of the IV-VI diluted magnetic semiconductor Ge1−xMnxTe by molecular beam epitaxy is reported. The epitaxial growth of Ge1−xMnxTe (x=0.13) on BaF2 (111) with a GeTe buffer layer is confirmed by x-ray diffraction and reflection high-energy electron diffraction. The ferromagnetic order is clearly established by the magnetization and magnetotransport measurements. The Curie temperature of 100K is obtained for the hole concentration of 7.86×1020cm−3. The existence of the strong p-d exchange which gives rise to the ferromagnetic order is revealed by the hard x-ray photoemission measurements.

IV-VI diluted magnetic semiconductor Ge1−xMnxTe epilayer grown by molecular beam epitaxy

Publisher's Note: “Carrier-induced ferromagnetism in Ge0.92Mn0.08Te epilayers with a Curie temperature up to 190 K” [Appl. Phys. Lett.93, 252502 (2008)]

IV-VI diluted magnetic semiconductor Ge0.92Mn0.08Te epilayers are grown on BaF2 substrates by molecular beam epitaxy. The ferromagnetic behaviors, such as the spontaneous magnetization, the coercive field, and the Curie temperature TC, are altered by the hole concentration p. In the Ge0.92Mn0.08Te layer with high p, strong magnetic anisotropy and the temperature dependence of the magnetization expected for homogeneous ferromagnets are observed, implying that long-range ordering is induced by the holes. The maximum TC reaches 190 K for 1.57×1021 cm−3.

Carrier-induced ferromagnetism in Ge0.92Mn0.08Te epilayers with a Curie temperature up to 190 K

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IV-VI diluted magnetic semiconductor Ge1−xMnxTe epilayer grown by molecular beam epitaxy

Publisher's Note: “Carrier-induced ferromagnetism in Ge0.92Mn0.08Te epilayers with a Curie temperature up to 190 K” [Appl. Phys. Lett.93, 252502 (2008)]

Carrier-induced ferromagnetism in Ge0.92Mn0.08Te epilayers with a Curie temperature up to 190 K