https://www.tandfonline.com/doi/pdf/10.1088/1468-6996/16/3/036005

A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

We have investigated the effect of spatial gain uniformity on the multiplication noise of InP/InGaAsP/InGaAs avalanche photodiodes (APD's) with separate absorption, "grading," and multiplication regions. APD's with localized regions of high gain exhibit higher excess noise factors and poorer Performance in lightwave receivers than those with uniform gain.

The effect of nonuniform gain on the multiplication noise of InP/InGaAsP/ InGaAs avalanche photodiodes

A renormalization group analysis of interfacial growth processes with an oblique incident flux and surface tension is carried out in (6 − ) dimensions A rich behavior characterized by a crossover from a novel growth regime to the familiar Edwards-Wilkinson universality class is predicted The exponents are calculated in the intermediate regime

Renormalization group study of growth processes with an oblique incident flux of atoms

In a lightwave system the function of the optical receiver is to transform the input optical signal, which consists of a series of light pulses, back into the original electrical format, usually a binary stream of voltage pulses. In order to determine whether, in a specific time slot, the signal from the photodetector corresponds to a “1” or a “0”, the receiver must perform a series of functions including detection, amplification, equalization, filtering, and retiming [1–4]. Figure 14.1 shows a block diagram of the components in a typical lightwave receiver. First, the receiver must convert the light signal into current; this function is performed by the photodetector. The photocurrent must then be amplified to a usable level. The first stage of amplification is achieved with a low-noise transistor preamplifier, and the remainder of the amplification is provided by the postamplifier. Often the output of the amplifier stage is distorted and it is the function of the equalizer to remove the signal distortions, thus providing a reasonable pulse shape to the filter section. Finally, the filter maximizes the signal-to-noise ratio while introducing minimal distortion to the signal itself. The performance of the receiver is usually measured in terms of its sensitivity, that is, the minimum received optical power required to achieve a given bit error rate (BER). Typically, the sensitivity is quoted at 102212;9 BER in dBm (0 dBm = 10−3 W) of optical power. Better receiver sensitivities permit wider repeater spacings and greater loss margins, which ultimately result in lower systems costs.

Photodetectors for Long-Wavelength Lightwave Systems

Doping of high concentration of Beryllium in GaAs layers, by molecular-beam epitaxy

Molecular beam epitaxy

Recently low dark current hybrid InP-InGaAsP APDs having an InP avalanche zone and a separate InGaAsP absorbing region have been reported.1,2 Such devices are being considered as detectors for long-wavelength fiber-optic communications. However, such APDs have not yet been thoroughly characterized. The purpose of this paper is to report the detailed characteristics of such APDs that have negligible dark current (ID < 6 nA at M = 30).

Detailed performance characteristics of hybrid InP-InGaAsP APDs

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Molecular beam epitaxy

Detailed performance characteristics of hybrid InP-InGaAsP APDs