We demonstrate the optical manipulation of cells and dielectric particles on the surface of silicon nitride waveguides. Glass particles with 2μm diameter are propelled at velocities of 15μm/s with a guided power of 20mW. This is approximately 20 times more efficient than previously reported, and permits to use this device on low refractive index objects such as cells. Red blood cells and yeast cells can be trapped on the waveguide and pushed along it by the action of optical forces. This kind of system can easily be combined with various integrated optical structures and opens the way to the development of new microsystems for cell sorting applications.

Optical manipulation of microparticles and cells on silicon nitride waveguides

Electromagnetic simulation and measurement data of flip-chip transitions are presented. First-order effects are identified and design criteria for millimeter-wave multichip interconnects are derived. Results cover chip detuning and bump geometry as well as simplified modeling. In a coplanar environment, the flip-chip scheme provides interconnects with excellent low-reflective properties. For conductor-backed structures, parasitic modes occur leading to unwanted crosstalk. These effects dominate the behavior so that overall performance of the flip-chip scheme can be evaluated properly only in conjunction with the actual motherboard packaging setup.

Millimeter-wave characteristics of flip-chip interconnects for multichip modules

Electromagnetic simulations and measurement data of flip-chip transitions are presented. First-order effects are identified and design criteria for mm-wave multi-chip interconnects are derived. In coplanar environment, the flip-chip scheme provides interconnects with excellent low-reflective properties. For conductor-backed structures, the suppression of parasitic modes represents the key issue.

Millimeterwave characteristics of flip-chip interconnects for multi-chip modules

In this paper, a hybrid technique combining the finite-difference (FD) method and the method of moments (MoM) in the frequency domain is proposed to predict the shielding effectiveness of rectangular conducting enclosures with apertures under external illumination The interior and exterior regions of the enclosure are analyzed separately by employing the field equivalence principle Internal electromagnetic fields are discretized using the (FD) method, while external fields are formulated by the MoM Enforcement of continuity of the tangential magnetic field over the aperture surface gives the desired equation to solve for electromagnetic fields everywhere Numerical results for the shielding effectiveness of a rectangular cavity with apertures calculated by the new hybrid technique are presented and validated by comparing with experimental data

A hybrid FD-MoM technique for predicting shielding effectiveness of metallic enclosures with apertures

This paper provides both modeling and design information on coplanar passive elements on a silicon substrate. The influence of substrate resistivity on coplanar waveguide (CPW) loss is discussed, and elements of a cell library for coplanar monolithic microwave integrated circuits (MMIC's) on high-resistivity substrates are presented. The elements include discontinuities, junctions, and spiral inductors. The models are based on field-theoretical simulations and verified by S-parameter measurements up to 110 GHz.

Coplanar passive elements on Si substrate for frequencies up to 110 GHz

The finite-difference method in the frequency domain is a powerful tool for analyzing arbitrarily shaped transmission-line discontinuities and junctions. An improved formulation based on Maxwell's equations in integral form is presented. It corresponds to the Helmholtz equation and reduces the numerical efforts in solving the large linear equation system considerably. The method is verified by comparison to previous work on microstrip. >

Improved finite-difference formulation in frequency domain for three-dimensional scattering problems

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Improved finite-difference formulation in frequency domain for three-dimensional scattering problems