K. Asano

Abstract: The electrical characteristics of 4H-SiC p–i–n diodes with 8H-type in-grown stacking faults are investigated. The 4H-SiC p–i–n diodes have epilayers with a low Z1/2 center density formed by carbon implantation. The forward voltage drops of the 4H-SiC p–i–n diode with 8H-type in-grown stacking faults are larger than those of the 4H-SiC p–i–n diode without an 8H-type in-grown stacking fault. The differential on-resistance of the 4H-SiC p–i–n diode with 8H-type in-grown stacking faults is larger than the drift resistance of the drift layer calculated from the doping density and thickness of the drift layer. A large number of electrons are trapped at 8H-type in-grown stacking faults, and the effective carrier density decreases compared with the doping density.