Hydrogen sensors are of increasing importance in connection with the development and expanded use of hydrogen gas as an energy carrier and as a chemical reactant. There are an immense number of sensors reported in the literature for hydrogen detection and in this work these sensors are classified into eight different operating principles. Characteristic performance parameters of these sensor types, such as measuring range, sensitivity, selectivity and response time are reviewed and the latest technology developments are reported. Testing and validation of sensor performance are described in relation to standardisation and use in potentially explosive atmospheres so as to identify the requirements on hydrogen sensors for practical applications.

Hydrogen Sensors - A review

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...

When group-III nitrides go infrared: New properties and perspectives

Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga2O3, MgxZn1−xO, III-nitride compounds (AlxGa1−xN/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.

Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

We report on III-nitride photovoltaic cells with external quantum efficiency as high as 63%. InxGa1−xN/GaN p-i-n double heterojunction solar cells are grown by metal-organic chemical vapor deposition on (0001) sapphire substrates with xIn=12%. A reciprocal space map of the epitaxial structure showed that the InGaN was coherently strained to the GaN buffer. The solar cells have a fill factor of 75%, short circuit current density of 4.2 mA/cm2, and open circuit voltage of 1.81 V under concentrated AM0 illumination. It was observed that the external quantum efficiency can be improved by optimizing the top contact grid.

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

Solid-state electronics

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

InGaN photovoltaic structures with p-n junctions have been fabricated by metal organic chemical vapour deposition. Using double-crystal X-ray diffraction measurements, it was found that the room temperature band gaps of p-InGaN and n-InGaN films were 2.7 and 2.8 eV, respectively. Values of 3.4 x 10(-2) mA cm(-2) short-circuit current, 0.43 V open-circuit voltage and 0.57 fill factor have been achieved under ultraviolet illumination (360 nm), which were related to p-n junction connected back-to-back with a Schottky barrier and many defects of the p-InGaN film. 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photovoltaic effects in InGaN structures with p–n junctions

Hydrogen sensors based on AlGaN/AlN/GaN HEMT

The influence of 1nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

The efficiencies of InxGa1-xN two-junction solar cells are calculated with various bandgap combinations of subcells under AM1.5 global, AM1.5 direct and AM0 spectra. The influence of top-cell thickness on efficiency has been studied and the performance of InxGa1-xN cells for the maximum light concentration of various spectra has been evaluated. Under one-sun irradiance, the optimum efficiency is 35.1% for the AM1.5 global spectrum, with a bandgap combination of top/bottom cells as 1.74 eV/1.15 eV. And the limiting efficiency is 40.9% for the highest light concentration of the AM1.5 global spectrum, with the top/bottom cell bandgap as 1.72 eV/1.12 eV.

https://iopscience.iop.org/article/10.1088/0022-3727/41/24/245104/pdf

Theoretical design and performance of InxGa1?xN two-junction solar cells

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