Junxi Wang
7 Papers
52 Citations
Junxi Wang is an academic researcher. The author has contributed to research in topics: Layer (electronics) & Gallium nitride. The author has an hindex of 5, co-authored 7 publications.
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Papers
Patent
System for testing gas sensors or semiconductor device performance
Xiaoliang Wang,Xinhua Wang,Chun Feng,Baozhu Wang,Zhiyong Ma,Junxi Wang,Guoxin Hu,Hongling Xiao,Junxue Ran,Cuimei Wang +9 more
- 12 Mar 2008
TL;DR: In this paper, a system to test performance of gas sensors or semiconductor elements, which comprises a gas supply unit to provide gas of controllable concentration and even mixing for performance test of gas sensor sensitivity and discharge test gas upon completion of the test for sensor sensitivity, a heating unit to control test temperature, a test unit to test voltage characteristic variation of the gas sensor or the semiconductor element in test gas of different temperatures and concentrations.
22
Patent
Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility
Xiaoliang Wang,Cuimei Wang,Guoxin Hu,Junxi Wang,Jianping Li,Yiping Zeng,Jinmin Li +6 more
- 05 Jul 2006
TL;DR: In this article, an interposed layer of unintentional doping aluminum?C gallium - nitrogen in thin layer prepared on buffer layer of gallium nitride in high-ohmic resistor; a channel layer of GCN in high mobility prepared on the interposition layer of aluminum? C gallium?C nitrogen.
8
Patent
Structure of improving gallium nitride base high electronic mobility transistor property and producing method
Cuimei Wang,Xiaoliang Wang,Guoxin Hu,Junxi Wang,Jianping Li,Yiping Zeng,Jimin Li +6 more
- 07 Jun 2006
TL;DR: In this article, a structure for increasing performance of transistors of GaN base high electronic movability includes: a sapphire substrate, a SiC2 substrate or a silicon substrate.
8
Patent
Method for fabricating transistor of aluminum-gallium-nitrogen/gallium nitride with high electron mobility
Xiaoliang Wang,Guoxin Hu,Junxi Wang,Luimei Wang,Yiping Zeng,Jinmin Li +5 more
- 01 Feb 2006
TL;DR: In this paper, the authors used metallorganics chemical vapor deposition or molecular beam epitaxy or method of gas phase epitaxy for hydride to develop a thin layer of nucleation layer of aluminum nitride on crystal face of sapphire (0001) substrate or silicon carbide (0001), substrate and silicon (111) substrate, and developed a thicker buffer layer of semi insulating gallium nitride in high impedance.
7
Patent
Crystal tube structure with high electronic shifting ratio of gallium nitrate base of double heterogenous structure and manufacturing method thereof
Xiaoliang Wang,Cuimei Wang,Guoxin Hu,Junxi Wang,Jianping Li,Yiping Zeng,Jinmin Li +6 more
- 14 Jun 2006
TL;DR: In this paper, a double-heterostructured GaN-base high-electron migration rate transistor structure, characterized in terms of a sapphire, silicon carbide or silicon substrate, is presented.
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