5 Papers
18 Citations
Junting Yu is an academic researcher from National University of Defense Technology. The author has contributed to research in topics: Charge sharing & Voltage. The author has an hindex of 3, co-authored 5 publications.
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Papers
Recoil-Ion-Induced Single Event Upsets in Nanometer CMOS SRAM Under Low-Energy Proton Radiation
TL;DR: In this paper, low-energy (<10 MeV) proton-induced single event upsets (SEUs) were investigated through proton and heavy ion experiments on a 65 nm CMOS bulk SRAM.
27
Characterization of the Effect of Pulse Quenching on Single-Event Transients in 65-nm Twin-Well and Triple-Well CMOS Technologies
TL;DR: In this paper, the effect of pulse quenching on single-event transients (SETs) was quantitatively characterized in 65-nm twin-well and triple-well CMOS technologies.
17
Experimental characterization of the dominant multiple nodes charge collection mechanism in metal oxide-semiconductor transistors
Ruiqiang Song,Shuming Chen,Yaqing Chi,Wu Zhenyu,Bin Liang,Jianjun Chen,Jingyan Xu,Peipei Hao,Junting Yu +8 more
TL;DR: In this paper, a transistor array-based test structure is used to distinguish charge collection owing to the drift-diffusion and parasitic bipolar amplification effect, and simple equations to determine the critical LET which may change the dominant multiple node charge collection mechanism.
9
Simulation analysis of heavy-ion-induced single-event response for nanoscale bulk-Si FinFETs and conventional planar devices
TL;DR: In this article, three-dimensional technology computer-aided design (TCAD) simulations are performed to investigate the charge collection mechanisms and single-event transient (SET) pulse widths for nanoscale devices.
3
Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process
TL;DR: In this article, the effects of supply voltage and body-biasing on SET pulse quenching were investigated for the first time in bulk FinFET process and the results indicated that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage.