Energy storage devices that can deliver high powers have many applications, including hybrid vehicles and renewable energy. Much research has focused on increasing the power output of lithium batteries by reducing lithium-ion diffusion distances, but outputs remain far below those of electrochemical capacitors and below the levels required for many applications. Here, we report an alternative approach based on the redox reactions of functional groups on the surfaces of carbon nanotubes. Layer-by-layer techniques are used to assemble an electrode that consists of additive-free, densely packed and functionalized multiwalled carbon nanotubes. The electrode, which is several micrometres thick, can store lithium up to a reversible gravimetric capacity of approximately 200 mA h g(-1)(electrode) while also delivering 100 kW kg(electrode)(-1) of power and providing lifetimes in excess of thousands of cycles, both of which are comparable to electrochemical capacitor electrodes. A device using the nanotube electrode as the positive electrode and lithium titanium oxide as a negative electrode had a gravimetric energy approximately 5 times higher than conventional electrochemical capacitors and power delivery approximately 10 times higher than conventional lithium-ion batteries.

High-Power Lithium Batteries from Functionalized Carbon Nanotube Electrodes

Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

https://www.mdpi.com/2079-4991/10/8/1437/pdf

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application.

BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.

Progress in BiFeO3-based heterostructures: materials, properties and applications

HfO2-Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO2/BiFeO3/HfO2 Design

Semiconductor memories are essential ingredients of modern electronic devices. Resistive Random-Access Memories (RRAMs) have emerged as better alternatives for conventional charge-based flash memories due to their distinct features like high speed, ultra-low power consumption, and small footprint. RRAMs can be fabricated in a three-layer metal-insulator-metal configuration that uses various materials, viz., oxides, chalcogenides, biomaterials, ferrites, and perovskites, as an active switching layer. Among the different materials, binary metal oxides are prominently used for device fabrication, owing to their superior chemical composition, multistate switching ability, and compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication process. The present review critically discusses RRAM devices based on various binary metal oxides. In particular, we tried to review the resistive switching (RS) mechanisms of titanium oxide (TiO2), zinc oxide (ZnO), nickel oxide (NiO), tungsten trioxide (WO3) copper oxide (CuxO), tantalum oxide (TaOx or Ta2O5), and hafnium oxide (HfO2) based devices. In addition to this, various non-volatile memory performance parameters were discussed comprehensively. The review sets the tone of explorations with an introductory discussion regarding the background of RS mechanisms. After that, various materials used to develop memory devices were dealt with in-depth. Multiple aspects and factors responsible for the improved performance of memory devices based on different oxides have been deliberated critically. Lastly, the review concludes with significant vital insights regarding the mechanism, usefulness, superior materials used so far, and future scope of exploring these metal oxides in the current memory technology and bio-inspired neuromorphic computing. 

Binary Metal Oxide-based Resistive Switching Memory Devices: A Status Review

ZnO/BiFeO3/ZnO multilayer was fabricated on silicon (Si) substrate by radio-frequency magnetron sputtering system. The resistive switching characteristics in ZnO/BiFeO3/ZnO devices are observed, and the resistive switching behavior can be modulated by white light.

Light-controlled resistive switching characteristics in ZnO/BiFeO3/ZnO thin film

White-light-controlled resistive switching in ZnO/BaTiO3/C multilayer layer at room temperature

We report spin–orbit torque (SOT) based on spin-torque ferromagnetic resonance (ST FMR) in a single ferrimagnetic layer. Temperature-dependent anomalous Hall resistance ([Formula: see text]) shows a magnetic compensation temperature ([Formula: see text]) of about 205 K. Temperature-dependent ST FMR is performed to quantify SOT; the torque is exerted to the total moment, and the SOT sign diverges as the temperautre approaches [Formula: see text]. X-ray photoelectron spectroscopy revealed that SOT arises due to the broken symmetry of the bulk spatial inversion along the normal direction of the film. Our finding provides useful information about the controlled temperature of bulk spin–orbit coupling in single layer GdFeCo.

Spin–orbit torque in a single ferrimagnetic GdFeCo layer near the compensation temperature

The electrical control of magnetization compensation temperature (${T}_{\mathrm{com}}$) is investigated in ferrimagnetic GdFeCo alloy deposited on ferroelectric $\mathrm{Pb}({\mathrm{Mg}}_{1/3}{\mathrm{Nb}}_{2/3}){\mathrm{O}}_{3}\text{\ensuremath{-}}30%\mathrm{PbTi}{\mathrm{O}}_{3}$ (PMN-PT). It is found that the applied electric field can cause a 19 K shift in ${T}_{\mathrm{com}}$. ${T}_{\mathrm{com}}$ under different applied electric fields across the PMN-PT substrate suggests that such electrical control is induced by piezostrain at the ferroelectric-ferrimagnetic interface. Spin-polarized first-principles calculations show that the change of exchange coupling strength in GdFeCo are caused by the lattice strains. Nonvolatile switching of resistance and direct bipolar control of exchange bias are achieved when an electric field is applied to appropriately designed multilayers. Our findings pave the way for electric field control of ${T}_{\mathrm{com}}$ in ferrimagnetic GdFeCo alloy and have implications for the development of energy efficient and nonvolatile ferrimagnetic magnetic random access memory. 

Piezostrain-controlled magnetization compensation temperature in ferrimagnetic GdFeCo alloy films

An obvious unipolar resistance switching is observed in BaTiO3/ZnO/BaTiO3/Carbon films. The resistance switching effect and the set voltage can be modulated by light irradiation. The RS ratio incre...

The resistive switching effects in BaTiO3/ZnO/BaTiO3/Carbon film

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