Efficient self-Raman frequency conversion from a diode-pumped actively Q-switched Nd:YVO4 laser at 1064 nm to Stokes emission at 1176 nm is achieved for the first time to the author’s knowledge. With a 0.2-at. % Nd:YVO4 crystal, greater than 1.5 W of power at a wavelength of 1176 nm at a repetition rate of 20 kHz was generated with a diode pump power of 10.8 W, corresponding to a conversion of 13.9%. Pulse width and peak power were 18 ns and 4.2 kW, respectively.

High-power diode-pumped actively Q-switched Nd:YVO4 self-Raman laser: influence of dopant concentration.

We report on the first passively Q-switched Nd:YAlO3 laser at ~1079.5 nm using MoS2 as saturable absorber. The MoS2 saturable absorber is fabricated by transferring the liquid-phase-exfoliated MoS2 nanosheets onto a BK7 glass substrate. By inserting the glass MoS2 saturable absorber into a plano-concave Nd:YAlO3 laser cavity, we obtain a stable Q-switched laser operation with a maximum average output power of 0.26 W corresponding to a pulse repetition rate of 232.5 kHz, a pulse width of 227 ns and a pulse energy of about 1.11 μJ. The results experimentally confirm the promising application of the new kind of 2D material, few-layer MoS2, in solid state lasers.

Passively Q-switched Nd:YAlO_3 nanosecond laser using MoS_2 as saturable absorber

Passive Q-switching performance was found to be greatly improved by use of a new Nd-doped mixed vanadate crystal Nd:Gd0.64Y0.36VO4 compared with that achieved with Nd:YVO4 and Nd:GdVO4. At an absorbed pump power of 12 W, an average output power of 2.78 W was obtained at a pulse repetition frequency of 15.4 kHz with an optical conversion efficiency of 23.2%, and the slope efficiency was determined to be 45.5%. The resulting pulse energy, peak power, and pulse width were 181μJ, 26.6 kW, and 6.8 ns, respectively.

Improvement of passive Q-switching performance reached with a new Nd-doped mixed vanadate crystal Nd:Gd0.64Y0.36VO4.

Passive Q-switching operation with a class of Nd:GdxY1−xVO4 crystals has been demonstrated. Compared to Nd:YVO4 and Nd:GdVO4, the pulse energy produced with Nd:Gd0.64Y0.36VO4 under certain conditions was found to be enhanced by factors of 6.0 and 2.5, while the peak power enhanced by factors of 14.7 and 3.6, respectively. At the incident pump power of 9.6 W, 1.3 W of average output power was obtained, with the pulse energy, peak power, and pulse repetition frequency being 166 μJ, 24.5 kW, and 7.7 kHz, respectively.

Pulse energy enhancement in passive Q-switching operation with a class of Nd:GdxY1−xVO4 crystals

We report continuous-wave and actively Q-switched laser performance achieved with Nd:LuVO4 crystal for the F43/2→I411/2 transition (corresponding wavelength of 1065.8 nm) under high-power diode pumping. Continuous-wave output power of 12.55 W is obtained with an optical conversion efficiency of 50.2%. In actively Q-switched operation the average output power reaches 5.42 W at a pulse repetition frequency of 40 kHz with 18 W of pump power incident upon the crystal, yielding an optical conversion efficiency of 30.1%. The pulse energy and peak power reach 138 µJ and 16.2 kW, respectively, at a pulse repetition frequency of 25 kHz under a pump power of 14.2 W; the pulse duration is 8.5 ns.

Continuous-wave and pulsed laser performance of Nd:LuVO4 crystal.

A diode-pumped highly efficient Cr4+:YAG passively Q-switched Nd:GdVO4 laser formed by a plano–concave resonator has been demonstrated. At the highest attainable absorbed pump power of 11.4 W, 4.05 W of average output power, which was two thirds of the maximum corresponding cw output, was achieved with an optical conversion efficiency of 35.5%, and the slope efficiency was determined to be 46.8%, reaching 85% of the magnitude of its cw counterpart. The resulting shortest pulse duration, single-pulse energy, and peak power were found to be 13 ns, 90 μJ, and 7 kW, respectively, with a pulse repetition frequency (PRF) of 45 kHz. Two particularly modified resonator configurations were employed; the largest pulse energy and the highest peak power reached were, respectively, 154 μJ and 11.2 kW at 8.5 W of absorbed pump power. An analytical relation between the PRF and the absorbed pump power is given for a passively Q-switched laser, showing good consistency with experiment with a Nd:GdVO4 laser. The dependence of the operational parameters on the pump power and on the output coupling was also investigated experimentally. Issues involving the criterion for passive Q switching are discussed in some detail for Cr4+:YAG passively Q-switched neodymium-doped vanadate lasers.

Efficient passive Q-switching operation of a diode-pumped Nd:GdVO 4 laser with a Cr 4+ :YAG saturable absorber

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Efficient passive Q-switching operation of a diode-pumped Nd:GdVO 4 laser with a Cr 4+ :YAG saturable absorber