Junfeng Cui
5 Papers
Junfeng Cui is an academic researcher. The author has contributed to research in topics: Magnetoresistance & Colossal magnetoresistance. The author has co-authored 2 publications.
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Papers
Hierarchically Engineered Manganite Thin Films with a Wide-Temperature-Range Colossal Magnetoresistance Response.
Shanshan Guo,Bao Wang Wang,Daniel Wolf,Axel Lubk,Weixing Xia,Ming Gang Wang,Junfeng Cui,D. Pravarthana,Zehua Dou,K. Leistner,Run-Wei Li,Ruben Hühne,Kornelius Nielsch +12 more
TL;DR: In this paper , a hierarchical La0.7Sr0.3MnO3 thin film with well-defined (001) and (221) crystallographic orientations was realized by combining substrate modification with conventional thin-film deposition.
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Achieving ultrahigh hole mobility in hydrogen-terminated diamond via boron nitride modifications
Mingyang Yang,Youwang Hu,Junfeng Cui,Yingying Yang,Mengting Qiu,Yunxiang Lu,Yi Shen,Zhenglin Jia,Kazuhito Nishimura,Chun Tang,Nan Jiang,Qilong Yuan +11 more
TL;DR: Researchers achieved ultrahigh hole mobility (1100 cm2 V−1 s−1) in hydrogen-terminated diamond by modifying its surface with boron nitride clusters, significantly improving its high-temperature tolerance and thermal stability for radio-frequency electronic devices.
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Ultra-Large Compressive Plasticity of E-Ga2 O3 Thin Films at the Submicron Scale.
Junfeng Cui,Qilong Yuan,Wei Wang,Guoxin Chen,Peiling Ke,Wenrui Zhang,Kazuhito Nishimura,Nan Jiang +7 more
TL;DR: Ultra-large compressive plasticity of ε-Ga2 O3 thin films at the submicron scale enables high impact resistance and potential applications in micro- or nano- electronic and optoelectronic devices.
V2CTx gas sensor based on memristive effect with ultrafast SO2 detection
Liangchao Guo,Chen Ye,Junfeng Cui,Chaoyue Zheng,Guanglong Ding,Yongbiao Zhai,Ye Zhou,Chao Zhang +7 more
TL;DR: In this article , a gas memristor with a millisecond-level cycle (360'ms) for SO2 ultrafast detection was demonstrated, and the function of gas response and memory was realized.
Study of amorphous layer on CVD diamond surface induced by Ga ion implantation in focused ion beam processing
Guangjun Jia,Guoxin Chen,Lei Zhang,Junfeng Cui,Beichen Duan,Boxiang Zhuang,Yutong Li,Huanming Lu,Nan Jiang,Kazuhito Nishimura,Peiling Ke +10 more
TL;DR: This study investigates the amorphous layer formed on CVD diamond surfaces via Ga ion implantation during FIB processing, revealing a double-layer structure with distinct sp2 and sp3 hybridized carbon atoms, and a 4.0 eV bandgap in the amorphous carbon layer.