Jun Qian

TL;DR: In this paper, the fabrication of 2D molecular single-crystal semiconductors with precise layer definition by using a floating-coffee-ring-driven assembly is presented, where bilayer molecular films exhibit singlecrystalline features with atomic smoothness and high film uniformity over a large area; field effect transistors yield average and maximum carrier mobilities of 4.8 and 13.0 cm2 V−1 s−1, respectively.

TL;DR: Self‐powered optoelectronic synapses that can selectively detect and preprocess the ultraviolet (UV) light are presented, which benefit from high‐quality organic asymmetric heterojunctions with ultrathin molecular semiconducting crystalline films, intrinsic heterogeneous interfaces, and typical photovoltaic properties.

Abstract: Based on intensive research, organic field‐effect transistors (OFETs) will likely remain at the zenith in information science for many years due to their numerous potential applications in portable and smart electronic devices. Elucidating the intrinsic charge‐transport behavior and realizing functional OFETs with superior device characteristics have been the cornerstones for the sustainable advancement in organic electronics. The emerging 2D molecular crystals (2DMCs) have become prosperous in the past few years, because they offer a revolutionary opportunity to overcome these obstacles. In particular, 2DMCs, which display a high uniform morphology, can be prepared using low‐cost and scalable solution‐based techniques. More importantly, their highly tunable molecular arrangement at a 2D limit is extraordinarily beneficial in property exploration and device optimization. In this article, the recent breakthroughs in material preparation, transistor applications, and physics of solution‐processed 2DMCs are reviewed, providing a promising avenue toward high‐performance, multifunctional, and diversiform organic electronic devices.

TL;DR: The presented strategy is capable of speeding up Fe-OFET memory devices by using solution-processed 2D molecular crystals via a solution-based process as the conducting channels in transistor devices, in which ferroelectric polymer acts as the gate dielectric.