One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, position-controlled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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One-dimensional ZnO nanostructures: Solution growth and functional properties

Recently, one-dimensional (1D) ZnO nanomaterials (NMs) have been extensively studied because both their functional properties and highly controllable morphology make them important building blocks for understanding nanoscale phenomena and realizing nanoscale devices. Compared with high temperature (>450 °C) vapor phase methods, solution-based synthesis methods can be conducted at low temperatures (25–200 °C) allowing for compatibility with many organic substrate materials and offer additional advantages such as straightforward processing, low cost, and ease of scale up. Although there exist several review articles in the literature regarding the synthesis and applications of 1D ZnO NMs, those focusing on solution-based synthesis methods are lacking. Thus, this review focuses mainly on 1D ZnO NMs synthesized by solution-based processing. Firstly, 1D ZnO non-patterned, nanoparticle-seeded synthesis and its associated solution growth kinetics are discussed. Next, synthesis of vertically-aligned ZnO nanorod arrays with controlled pattern and density on various substrates is reviewed. Finally, important applications of 1D ZnO NMs are highlighted including sensors, field emission devices, photodetectors, optical switches, and solar cells.

Solution synthesis of one-dimensional ZnO nanomaterials and their applications

Highly transparent and UV-resistant superhydrophobic arrays of SiO2-coated ZnO nanorods are prepared in a sequence of low-temperature (<150 °C) steps on both glass and thin sheets of PET (2 × 2 in.2), and the superhydrophobic nanocomposite is shown to have minimal impact on solar cell device performance under AM1.5G illumination. Flexible plastics can serve as front cell and backing materials in the manufacture of flexible displays and solar cells.

Highly Transparent and UV-Resistant Superhydrophobic SiO2-Coated ZnO Nanorod Arrays

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.

/pdf/polarity-in-gan-and-zno-theory-measurement-growth-and-1h7k73yl17.pdf

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Having the benefit of several features such as low cost, straightforward processing, easy fabrication, large area deposition and physical flexibility, low temperature solution processed electronic devices have gained traction in the eyes of the research community as the difficulties associated with conventional higher temperature crystalline semiconductor devices are incrementally rendering them outdated. Over the last decade, amongst metal oxides, ZnO with its rich variety of nanoforms has been documented as the candidate with the highest economic impact by virtue of its diverse use in a plethora of electronic and optoelectronic applications relying on its associated unique functional features such as high mobility, excellent thermal stability and high transparency. To date, most review articles in the literature focused on ZnO nanostructures realized via the vapour phase method whereas a comprehensive study on solution processed nanoforms and their widespread use is still lacking. The current article mainly highlights an overview of recent developments in multi-dimensional ZnO nanoarchitectures processed via low temperature, rational approaches and their functional properties in field emission devices and environmental remediation. In addition to these descriptions of controlled morphology design and the usage perspective, significant issues pertinent to such geometrical evolution and device performance determination and the possible outlook for low temperature research on ZnO are also described.

Recent advances in low temperature, solution processed morphology tailored ZnO nanoarchitectures for electron emission and photocatalysis applications

We report on how to tune the density of zinc oxide (ZnO) nanowire arrays in a wide range (more than 5 orders of magnitude) in a low temperature (80 °C) solution-phase growth process. A model based on the coexistence of nanowire growth and etching of the ultrathin ( 3.5 nm), the variation is very narrow, and if it is too thin (<1.5 nm), no nanowires can grow. In addition, the density variation was accompanied by the change of both diameter and height of the nanowires, which leads to a change in aspect ratio. Both changes in density and aspect ratio were found to obviously affect the field emission characteristics. It was demonstrated that optimal conditions can be found to grow ZnO nanowire films with better field emission characteristics.

Ultrathin Seed-Layer for Tuning Density of ZnO Nanowire Arrays and Their Field Emission Characteristics

Electromagnetic (EM) wave absorption films have attracted much attention for its wearable, portable features and easy replacement for damaged parts. Due to the lack of structural design, the common EM...

Rational design of multiple-layer films with continuous impedance gradient variation for enhanced microwave absorption performances

Three-dimensional six-fold symmetry ZnO sub-microstructures

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Ultrathin Seed-Layer for Tuning Density of ZnO Nanowire Arrays and Their Field Emission Characteristics

Rational design of multiple-layer films with continuous impedance gradient variation for enhanced microwave absorption performances

Three-dimensional six-fold symmetry ZnO sub-microstructures