An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention is directed to perform fine low-voltage control without largely increasing the circuit layout area in a low-power consumption structure. In the case of shifting a region to a low-speed mode, a system controller outputs a request signal and an enable signal to a power switch controller and a low-power drive circuit, respectively, to turn off a power switch and to perform a control so that the voltage level of a virtual reference potential becomes about 0.2 V to about 0.3V. The region operates on voltages between a power supply voltage and a virtual reference potential, so that it is controlled in the low-speed mode.

Semiconductor Integrated Circuit Device

A semiconductor memory device comprises memory cells, a bitline connected to the memory cells, a read circuit including a precharge circuit, and a first transistor connected between the bitline and the read circuit, wherein a first voltage is applied to a gate of the first transistor when the precharge circuit precharges the bitline, and a second voltage which is different from the first voltage is applied to the gate of the first transistor when the read circuit senses a change in a voltage of the bitline.

Semiconductor memory device.

A module for encapsulating a microelectronic device has a polished mating surface around the periphery of the substrate on which is deposited at least one thin film sealband fabricated at a temperature no greater than about 400° C. The sealband has a thickness of less than about 0.001 in. and comprising a metal capable of wetting molten solder which has a melting point no greater than about 400° C. and adhering to the solder after solidification. A layer of the solder is disposed between the sealbands of the cap and substrate forming a hermetic seal for the module.

Hermetic thin film metallized sealband for SCM and MCM-D modules

In an integrated circuit (IC) adapted for use in a stack of interconnected ICs, interrupted through-silicon-vias (TSVs) are provided in addition to uninterrupted TSVs. The interrupted TSVs provide signal paths other than common parallel paths between the ICs of the stack. This permits IC identification schemes and other functionalities to be implemented using TSVs, without requiring angular rotation of alternate ICs of the stack.

Using interrupted through-silicon-vias in integrated circuits adapted for stacking

Disclosed are a semiconductor integrated circuit device and methods for production thereof. An embodiment of the invention is a semiconductor chip that comprises fuses constituting part of redundancy circuits formed therein, the fuses being made of the same ingredients CCB bump substrate metal. The fuses are patterned simultaneously during the patterning of the CCB bump substrate metal. This involves forming the fuses using at least part of the ingredients of an electrode conductor pattern in the chip. The cutting regions of the fuses are made of only one of the metal layers constituting the substrate. The principal plane of the semiconductor chip has a fuse protective film formed over at least the cutting regions of the fuses for protection of the latter. In operation, a switch MOSFET under switching control of a redundancy signal is used to select one of two transmission paths, one carrying an address signal or a decode signal, the other carrying a reference voltage. This allows a faulty circuit to be replaced with the corresponding redundancy circuit.

Semiconductor integrated circuit device and methods for production thereof

PROBLEM TO BE SOLVED: To facilitate cutting treatment of a fuse for composing one part of a redundant circuit SOLUTION: A fuse 16 is formed on a surface protection film 9 In this case, the fuse 16 composes one portion of the redundant circuit formed in a semiconductor chip 7, and at the same time, is composed by the same material as foundation metal BLM of a CCB bump 6 Then, the cutting place of the fuse 16 is composed merely by one metal layer of the foundation metal BLM

Semiconductor integrated circuit device and its manufacturing method

PURPOSE: To prevent the deterioration of CCB connecting section, to improve reliability, to attain high density packaging, to enable the usage of a wafer manufacturing process and to enhance the accuracy of finishing and yield on manufacture in a semiconductor integrated circuit device. CONSTITUTION: In a semiconductor intagrated circuit device, an Si wafer 1a, which is formed of the same Si as an LSI chip 2 and in which through-holes 3 are formed, is used as a package substrate 1. COPYRIGHT: (C)1992,JPO&Japio

Semiconductor substrate, semiconductor integrated circuit device using same and manufacture of semiconductor substrate

PURPOSE:To make needless a BLM layer forming apparatus, facilities or special material therefor by using the same material as a part of the material for making component elements of an electric interconnection layer as Y material for a BLM layer to be formed on a part of this layer. CONSTITUTION:After forming an electric interconnection layer 5 electrically connected to a lower electric interconnection layer through contact holes, an insulation film 6 e.g. SiN film on a substrate 1 by the CVD method. After forming e.g. a Ti-W alloy layer 8 contg. W about 40at% on the substrate 1, a Pt layer 9 is deposited on its surface. To form both layers 8 and 9, the electric interconnection layer forming technology using the CVD apparatus or sputtering apparatus, vapor deposition apparatus etc. This makes needless, an independent apparatus and facilities for forming a BLM layer and special material therefor, thereby reducing the production cost.

Semiconductor integrated circuit device and production thereof

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Semiconductor integrated circuit device and methods for production thereof

Semiconductor integrated circuit device and its manufacturing method

Semiconductor substrate, semiconductor integrated circuit device using same and manufacture of semiconductor substrate

Semiconductor integrated circuit device and production thereof