Jun Chen
Northwestern University
4 Papers
7 Citations
Jun Chen is an academic researcher from Northwestern University. The author has contributed to research in topics: Superconducting tunnel junction & Tunnel effect. The author has an hindex of 3, co-authored 4 publications.
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Papers
Role of engineered materials in superconducting tunnel-junction x-ray detectors: suppression of quasi-particle recombination losses via a phononic bandgap
E. D. Rippert,John B Ketterson,Jun Chen,S. N. Song,S. Lomatch,S. R. Maglic,Christopher D. Thomas,M. A. Cheida,Melville P. Ulmer +8 more
- 01 Jan 1992
TL;DR: In this article, an engineered structure is proposed that can alleviate quasi-particle recombination losses via the existence of a phononic band gap that overlaps the 2-Delta energy of phonons produced during recombination of quasiparticles.
4
High-energy-resolution x-ray detection using multilayered superconducting tunnel junctions
E. D. Rippert,S. N. Song,S. R. Maglic,S. Lomatch,Jennifer F. Wang,Jun Chen,Christopher D. Thomas,John B Ketterson,Melville P. Ulmer +8 more
- 29 Jun 1994
TL;DR: In this article, a design concept for an X-ray detector based on a 1D superlattice of superconducting tunnel junctions is presented, along with recent experimental and computer modeling results, which has the potential for alleviating many of the potential resolution degrading mechanisms while operating in the 1 K temperature range.
3
Multilayered superconducting tunnel junction x‐ray detectors
E. D. Rippert,John B Ketterson,Melville P. Ulmer,S. N. Song,S. R. Maglic,Christopher D. Thomas,Jun Chen,S. Lomatch,M. A. Chieda +8 more
- 01 Jan 1994
TL;DR: In this paper, a new approach based on multiple (10's to 100's) layers of vertically stacked tunnel junctions is proposed for the alleviation of many of the mechanisms that have been suggested as leading to the degradation of energy resolution and providing built in redundancy against barrier shorts.
1
High quality a -Si/Nb and a -SiN/NbN artificial multilayers for Josephson applications
TL;DR: In this paper, a high-resolution transmission electron microscopy study of multilayer films prepared by magnetron sputtering was performed, and it was shown that the morphology of the growing interface in a-Si/Nb and n-SiN/NBN multilayers is remarkably uniform and smooth.