Jun Beom Kim
Yeungnam University
8 Papers
9 Citations
Jun Beom Kim is an academic researcher from Yeungnam University. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 5, co-authored 5 publications.
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Papers
Electrocatalysts for Zinc-air Batteries Featuring Single Molybdenum Atoms in a Nitrogen-doped Carbon Framework.
Jayaraman Balamurugan,P. Muthu Austeria,Jun Beom Kim,Eun-Suk Jeong,Hsin-Hui Huang,Do Hwan Kim,Nikhil Koratkar,Sang Ouk Kim +7 more
TL;DR: In this article , the core-shell structure of vanadium molybdenum oxynitride nanoparticles was used to construct a reversible bifunctional electrocatalyst for rechargeable zinc-air batteries.
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Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
Yujin Jang,Jun Beom Kim,Tae Eun Hong,So Jeong Yeo,Sunju Lee,Eun Ae Jung,Bo Keun Park,Taek-Mo Chung,Chang Gyoun Kim,Do-Joong Lee,Han-Bo-Ram Lee,Soo-Hyun Kim +11 more
TL;DR: In this paper, an atomic layer deposition (ALD) was used to grow a self-limited thin film with a linear dependency of the film thickness on the number of ALD cycles and showed a growth rate of 0.028nm/cycle on a thermally grown SiO 2 substrate.
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A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
Jun Beom Kim,Byeonghyeon Jang,Hyun-Jung Lee,Won Seok Han,Do-Joong Lee,Han-Bo-Ram Lee,Tae Eun Hong,Soo-Hyun Kim +7 more
TL;DR: In this paper, an atomic layer deposition (ALD) approach was used for the preparation of tungsten nitride and carbide thin films using a fluorine-and nitrogen-free W metallorganic precursor.
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Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
TL;DR: In this paper, Tungsten nitride (WNx) thin films were deposited on SiO2 substrates by atomic layer deposition (ALD) using a fluorine-free tungsten metal-organic precursor of tris(3-hexyne) tungststen carbonyl, W(CO)(CH3CH2C)≡CCH2CH3)3 and NH3 plasma as a reactant at a deposition temperature of 250 °C.
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Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
TL;DR: In this paper, tungsten carbides (WCx) thin films were deposited on thermally grown SiO2 substrates by atomic layer deposition (ALD) using a fluorine-and nitrogen-free W metallorganic precursor, and N2 + H2 plasma as the reactant at deposition temperatures between 150 and 350 °C.
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