In one aspect of the present disclosure, a semiconductor device includes a channel layer, an AlxIn1-xN layer on the channel layer with a thickness of t1, and a reverse polarization layer on the AlxIn1-xN layer with a thickness of t2. The thickness is 0.5*t1<=t2<=3*t1. In another aspect of the present disclosure, a method of manufacturing a semiconductor device is provided. The method including: forming a channel layer on a substrate; forming an AlxIn1-xN layer on the channel layer with a thickness of t1; and forming a reverse polarization layer on the AlxIn1-xN layer with a thickness of t2. The thickness is 0.5*t1<=t2<=3*t1.

Semiconductor device and method of fabricating the same

This letter reports the fabrication of InAlN/GaN high-electron mobility transistors (HEMTs) with a three-terminal off-state breakdown voltage (BV) of 3000 V and a low specific on-resistance of 4.25 mΩ·cm2. To reduce the drain-to-source leakage current in these devices, an AlGaN back barrier has been used. The gate leakage current in these devices is in the ~10-10 A/mm range owing to the use of a SiO2 gate dielectric. This current level is more than six orders of magnitude lower than in Schottky-barrier HEMTs. The combination of an AlGaN back barrier, the high charge sheet density of InAlN/GaN HEMTs, and the low leakage due to the gate-dielectric layer allows for a figure-of-merit BV2/RON,SP of ~2.1 × 109 V2·Ω-1·cm-2.

3000-V 4.3- $\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier

https://nitech.repo.nii.ac.jp/?action=repository_action_common_download&item_id=6639&item_no=1&attribute_id=39&file_no=1

Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition

We report the large-signal performance of high electron mobility transistors (HEMTs) fabricated on GaN- and AlN-capped AlInN/GaN epilayers grown on semi-insulating SiC substrates. Large-signal measurements at 10 and 40 GHz are presented with both gate and drain dynamic loadlines to clarify the factors limiting the high-power performance. Devices fabricated with AlN-capped epilayers show a marginal advantage in terms of higher current and reduced dispersion, but GaN-capped epilayers perform better in terms of reduced short-channel effects and better channel control. In large-signal operation at 40 GHz, both device types delivered power densities in excess of 4.5 W/mm. A maximum power density of 5.8 W/mm is achieved on GaN-capped devices which is, to the best of our knowledge, the highest power density reported at 40 GHz in AlInN/GaN-based HEMTs.

AlInN-Based HEMTs for Large-Signal Operation at 40 GHz

Anisotropic optical polarization of AlGaN has been one of the major challenges responsible for the poor efficiency of AlGaN-based ultraviolet light emitting diodes (UV LEDs). In this work, we experimentally investigated the effect of internal strain on the optical polarization of AlGaN epilayers which were pseudomorphically grown on Al x Ga1?x N templates with Al composition changing from 0.1 to 0.42. High-resolution x-ray diffraction and reciprocal space mapping were conducted to determine the crystal quality and strain status. Polarization-dependent photoluminescence (PL) measurement was performed to study the degree of polarization (DOP) of light emission from lateral facet of the AlGaN epilayer. The result showed that the DOP increased from???0.69 to???0.24 with the in-plane strain changing from tensile status (1.19%) to compressive status (?0.70%) and it exhibited a strong dependence of the DOP on the strain. These results demonstrated that the compressive in-plane strain could facilitate TE mode emission from AlGaN, which providing a potential way to enhance the surface light emission of AlGaN-based UV LEDs via strain management of the active region.

https://iopscience.iop.org/article/10.1088/0022-3727/49/41/415103/pdf

Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on Al x Ga 1−x N templates

In this paper, we report for the first time, high voltage operations of field plated Al1–xInxN (x≈0.18) HEMTs. The epilayer structure of our devices consisted of AlInN/GaN HEMT structure with and without AlN cap layer. 1.25 μm gate-length AlInN/GaN HEMT devices were then fabricated with 2 μm source-gate distance using our baseline fabrication process. The gate-drain spacing were varied from 6 (baseline) to 12 μm. The devices were field-plated to analyze the breakdown voltage. The maximum drain current density in devices grown on sapphire substrates was around 1.2 A/mm (at a +3 V gate bias). Maximum transconductance was around 370 mS/mm. The insulating AlN cap layer, combined with the field-plated gate design had proved to substantially improve the devices OFF-state breakdown voltage. The measured breakdown voltage was as high as 350-400 V. The results presented highlights the potentials of AlInN-based devices for the high-voltage and energy-efficient power-electronics applications (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

High voltage operation of field-plated AlInN HEMTs

Off-axis reciprocal-space mapping was performed on aluminum gallium nitride deep-ultraviolet light-emitting diode base layers. The results indicate that aluminum gallium nitride films growing on aluminum nitride-on-sapphire templates initially grow in compression, nearly lattice matched to the relaxed aluminum nitride buffer layer with approximately 0.5% biaxial strain. This compressive strain may be partially relieved over the course of the thick aluminum gallium nitride growth when a high-quality aluminum nitride and superlattice layer is used. Additionally, a growth interruption appears to allow growth of an unstrained aluminum gallium nitride layer without a gradual release of compressive strain. Growth on a bulk aluminum nitride substrate appears to yield an aluminum gallium nitride layer in tension rather than compression.

Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode

We report a new approach for growing thicker (>2 μm) low-defect AlGaN layers over sapphire using pulsed MOCVD procedure. These high content AlGaN layers serve as templates for subsequent n-AlGaN growth for deep ultraviolet light emitting diodes (DUV LEDs). During the growth of the Al x Ga 1 ―x N layer, the pulsed-growth conditions were cyclically adjusted to reduce the dislocations. This leads to AlGaN templates with an RMS roughness of 9.6 A and (102) off-axis X-ray line-width 550 arcsec. The transmission electron microscope (TEM) analysis shows 4 × 10 7 cm ―2 edge type and 2 × 10 6 cm ―2 screw type of threading dislocation densities at best regions. On the average dislocation density in these films is 4 x 10 8 cm ―2 . A light emitting diode (LED) structure emitting at 280nm was deposited on these templates. A comparative study showed the EL emission for LEDs on the new low-defect templates to be more than 1.6 times stronger than our conventional DUV LED structures. In this paper the details of our growth procedure, the epi-structure X-ray, atomic force microscopy (AFM), TEM, and other characterizations will be presented. A comparative study of DUV LED structures over conventional and improved templates of this work will be discussed.

Dislocation reduction in high Al‐content AlGaN films for deep ultraviolet light emitting diodes

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High voltage operation of field-plated AlInN HEMTs

Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode

Dislocation reduction in high Al‐content AlGaN films for deep ultraviolet light emitting diodes