Josep Montserrat
Spanish National Research Council
146 Papers
784 Citations
Josep Montserrat is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Ion implantation & Gate oxide. The author has an hindex of 19, co-authored 146 publications. Previous affiliations of Josep Montserrat include Autonomous University of Barcelona.
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Papers
Synthesis of luminescent particles in SiO2 films by sequential Si and C ion implantation
O. González-Varona,Caroline Bonafos,Manel López,B. Garrido,Alejandro Pérez-Rodríguez,Joan Ramon Morante,Josep Montserrat,Rafael Rodríguez +7 more
TL;DR: In this article, thermal oxides co-implanted with Si and C+ and submitted to thermal annealing treatments present an intense white photoluminescence emission at room temperature, visible to the naked eye.
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SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator
Amador Pérez-Tomás,Michael R. Jennings,Peter M. Gammon,G. J. Roberts,Philip Mawby,José Antonio Alloza Millán,Phillippe Godignon,Josep Montserrat,Narcis Mestres +8 more
TL;DR: In this article, the electrical characteristics of MOS capacitors and lateral MOSFETs with oxidized Ta"2Si (O-Ta" 2Si) as a high-k dielectric on silicon carbide or stacked on thermally grown SiO"2 on SiC were compared.
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Time-Resolved Evaporation Rate of Attoliter Glycerine Drops Using On-Chip CMOS Mass Sensors Based on Resonant Silicon Micro Cantilevers
M.V. Gaudo,Gabriel Abadal,Jaume Verd,J. Teva,Francesc Pérez-Murano,E.F. Costa,Josep Montserrat,Arantxa Uranga,Jaume Esteve,Nuria Barniol +9 more
TL;DR: In this paper, a mass sensor based on a resonant cantilever integrated in a CMOS chip is used to determine the time-resolved evaporation rate of small glycerine drops.
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Si technology based microinductive devices for biodetection applications
Christophe Serre,S. Martinez,Alejandro Pérez-Rodríguez,Joan Ramon Morante,Jaume Esteve,Josep Montserrat +5 more
TL;DR: In this article, the authors presented the design and fabrication of inductive devices integrated in Si technology aimed at high sensitivity biodetection applications, which are based on the changes of the coil inductance due to the presence of magnetic particles in the active region of the device.
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Structural analysis of SiC Schottky diodes failure mechanism under current overload
Javier León,Maxime Berthou,Xavier Perpiñà,Viorel Banu,Josep Montserrat,Miquel Vellvehi,Philippe Godignon,Xavier Jordà +7 more
TL;DR: In this paper, a focused ion beam coupled with scanning electron microscope has been used to analyze the physical signature at these locations, revealing that the destruction mechanism responsible for their failure was the electromigration and thermomigration of tungsten into aluminum, locally modifying the electrical behavior of the Schottky barrier (loss of blocking capability).
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