Josep Montserrat
Spanish National Research Council
146 Papers
784 Citations
Josep Montserrat is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Ion implantation & Gate oxide. The author has an hindex of 19, co-authored 146 publications. Previous affiliations of Josep Montserrat include Autonomous University of Barcelona.
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Papers
Ion beam synthesis of compound nanoparticles in SiO2
A. Pe´rez-Rodri´guez,B. Garrido,C. Bonafos,M. Lo´pez,O. Gonza´lez-Varona,J. R. Monrante,Josep Montserrat,R. Rodri´guez +7 more
TL;DR: In this article, the ion beam synthesis of group IV (SiC) and II-VI (ZnS) compound nanoparticles in SiO2 layers is studied, which is potentially interesting for optoelectronic applications such as electroluminescent devices emitting in the visible and UV range.
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Power cycling analysis method for high-voltage SiC diodes
TL;DR: A novel analysis method for the power cycling test, developed for high-voltage and temperature silicon carbide diodes, able to evidence the transformations occurred in the bonding contact and the dye attach is described.
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Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits
Arnaud Devie,Dominique Tournier,Phillippe Godignon,Miquel Vellvehi,Josep Montserrat,Xavier Jordà +5 more
TL;DR: In this paper, the authors report on the fabrication, DC characterization and in-circuit behavior of the MESFETs and analyze the performances of basic analog circuits such as an amplifier and a clock.
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Characterisation and stabilisation of Pt/TaSix/SiO2/SiC gas sensor
Olga Casals,B. Barcones,Albert Romano-Rodriguez,Christophe Serre,Alejandro Pérez-Rodríguez,Joan Ramon Morante,Phillippe Godignon,Josep Montserrat,José Millan +8 more
TL;DR: In this paper, the chemical and structural analysis of MOS devices with Pt/TaSix catalytic gates fabricated on 6H-SiC substrates for their use as gas sensors is presented.
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3.3 kV-10A 4H-SiC PiN diodes
Pierre Brosselard,Nicolas Camara,Jawad ul Hassan,Xavier Jordà,Peder Bergman,Josep Montserrat,José Millan +6 more
TL;DR: In this paper, an innovative process has been developed by Linkoping University to prepare the 4HSiC substrate surface before epitaxial growth, and the processed PiN diodes have been characterized in forward and reverse mode at different temperature.
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