Energy harvesting generators are attractive as inexhaustible replacements for batteries in low-power wireless electronic devices and have received increasing research interest in recent years. Ambient motion is one of the main sources of energy for harvesting, and a wide range of motion-powered energy harvesters have been proposed or demonstrated, particularly at the microscale. This paper reviews the principles and state-of-art in motion-driven miniature energy harvesters and discusses trends, suitable applications, and possible future developments.

/pdf/energy-harvesting-from-human-and-machine-motion-for-wireless-3lsf4oudvo.pdf

Energy Harvesting From Human and Machine Motion for Wireless Electronic Devices

Power consumption is forecast by the International Technology Roadmap of Semiconductors (ITRS) to pose long-term technical challenges for the semiconductor industry. The purpose of this paper is threefold: (1) to provide an overview of strategies for powering MEMS via non-regenerative and regenerative power supplies; (2) to review the fundamentals of piezoelectric energy harvesting, along with recent advancements, and (3) to discuss future trends and applications for piezoelectric energy harvesting technology. The paper concludes with a discussion of research needs that are critical for the enhancement of piezoelectric energy harvesting devices.

/pdf/powering-mems-portable-devices-a-review-of-non-regenerative-30r5zxggdp.pdf

Powering MEMS portable devices—a review of non-regenerative and regenerative power supply systems with special emphasis on piezoelectric energy harvesting systems

Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.

/pdf/review-semiconductor-piezoresistance-for-microsystems-2i2jehwa4g.pdf

Review: Semiconductor Piezoresistance for Microsystems

Journal of Applied physics,Vol.33 : 1962年に発表されたレオロジー関連の論文

This paper presents the latest progress in kinetic energy harvesting for wide applications ranging from implanted devices and wearable electronic devices to mobile electronics and self-powered wireless network nodes. The advances in energy harvesters adopting piezoelectric and electromagnetic transduction mechanisms are presented. Piezoelectric generators convert mechanical strain on the active material to electric charge while electromagnetic generators make use of the relative motion between a conductor and a magnetic flux to induce charge in the conductor. The existent kinetic piezoelectric generators including human-powered and vibration-based devices are comprehensively addressed. In addition, the electromagnetic generators which include resonant, rotational, and ?hybrid? devices are reviewed. In the conclusion part of this paper, a comparison between the transduction methods and future application trends is given.

Kinetic Energy Harvesting Using Piezoelectric and Electromagnetic Technologies—State of the Art

This work aims to the analysis of high-voltage (HV) SiC MOSFETs’ reliability and robustness. Large-area (up to 25 mm2) devices rated for 1.7-, 3.3-, and 4.5-kV applications were fabricated with a special process for gate oxide formation aimed to improve channel mobility. This treatment consists of the incorporation of boron atoms into the SiO2/SiC interface. The unit cell was designed to achieve a good short-circuit performance. As voltage rating increases, the reliability and robustness of power devices are crucial. Nevertheless, the procedures to test and characterize wide bandgap (WBG) power devices are still not standardized. In this work, the $V_{\mathrm {th}}$ drift was evaluated at room temperature and at high temperature using a gate stress test specific for SiC devices. Switching at high bus voltage, short-circuit and power cycling were considered as reliability tests. Test results put in evidence that fabricated devices show reasonably good robustness but suffer from a significant $V_{\mathrm {th}}$ drift caused by the boron process added to the gate oxide formation.

Reliability and Robustness Tests for Next-Generation High-Voltage SiC MOSFETs

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Reliability and Robustness Tests for Next-Generation High-Voltage SiC MOSFETs