Josep Montserrat
Spanish National Research Council
146 Papers
784 Citations
Josep Montserrat is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Ion implantation & Gate oxide. The author has an hindex of 19, co-authored 146 publications. Previous affiliations of Josep Montserrat include Autonomous University of Barcelona.
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Papers
SiC Integrated Circuit Control Electronics for High-Temperature Operation
Mihaela Alexandru,Viorel Banu,X. Jorda,Josep Montserrat,Miquel Vellvehi,Dominique Tournier,José Millan,Philippe Godignon +7 more
TL;DR: A prototype set of essential mixed-signal ICs on SiC capable of controlling power switches and a lateral power MESFET able to operate at high temperatures, all embedded on the same chip.
Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors
TL;DR: In this paper, an alternative gate oxide configuration is proposed to enhance the SiO2/SiC interface quality, enabling high mobility 4H-SiC lateral metaloxide-semiconductor field effect transistors (MOSFETs).
Laser emission in Nd3+ doped barium–titanium–silicate microspheres under continuous and chopped wave pumping in a non-coupled pumping scheme
Leopoldo L. Martin,Daniel Navarro-Urrios,F. Ferrarese-Lupi,C. Pérez-Rodríguez,Inocencio R. Martín,Josep Montserrat,Carlos Domínguez,Blas Garrido,Nestor E. Capuj +8 more
TL;DR: In this paper, a non-coupled excitation and detection of microspheres made of Nd 3C doped barium-titanium-silicate glass has been demonstrated and measured.
A platform for monolithic CMOS-MEMS integration on SOI wafers
Maria Villarroya,Maria Villarroya,Eduard Figueras,Josep Montserrat,Jaume Verd,J. Teva,Gabriel Abadal,Francesc Pérez Murano,Jaume Esteve,Nuria Barniol +9 more
TL;DR: In this paper, a new platform for micro-and nano-electromechanical systems based on crystalline silicon as the structural layer in CMOS substrates is presented, which allows the monolithic integration of the mechanical transducer on crystal silicon while the characteristics of structural layer are kept independent from the CMOS technology.
Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier
TL;DR: In this article, 1.7kV and 6-kV 4H-SiC junction barrier Schottky (JBS) diodes with different geometries and their forward characteristics were measured up to 300°C.