Energy harvesting generators are attractive as inexhaustible replacements for batteries in low-power wireless electronic devices and have received increasing research interest in recent years. Ambient motion is one of the main sources of energy for harvesting, and a wide range of motion-powered energy harvesters have been proposed or demonstrated, particularly at the microscale. This paper reviews the principles and state-of-art in motion-driven miniature energy harvesters and discusses trends, suitable applications, and possible future developments.

/pdf/energy-harvesting-from-human-and-machine-motion-for-wireless-3lsf4oudvo.pdf

Energy Harvesting From Human and Machine Motion for Wireless Electronic Devices

Power consumption is forecast by the International Technology Roadmap of Semiconductors (ITRS) to pose long-term technical challenges for the semiconductor industry. The purpose of this paper is threefold: (1) to provide an overview of strategies for powering MEMS via non-regenerative and regenerative power supplies; (2) to review the fundamentals of piezoelectric energy harvesting, along with recent advancements, and (3) to discuss future trends and applications for piezoelectric energy harvesting technology. The paper concludes with a discussion of research needs that are critical for the enhancement of piezoelectric energy harvesting devices.

/pdf/powering-mems-portable-devices-a-review-of-non-regenerative-30r5zxggdp.pdf

Powering MEMS portable devices—a review of non-regenerative and regenerative power supply systems with special emphasis on piezoelectric energy harvesting systems

Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.

/pdf/review-semiconductor-piezoresistance-for-microsystems-2i2jehwa4g.pdf

Review: Semiconductor Piezoresistance for Microsystems

Journal of Applied physics,Vol.33 : 1962年に発表されたレオロジー関連の論文

This paper presents the latest progress in kinetic energy harvesting for wide applications ranging from implanted devices and wearable electronic devices to mobile electronics and self-powered wireless network nodes. The advances in energy harvesters adopting piezoelectric and electromagnetic transduction mechanisms are presented. Piezoelectric generators convert mechanical strain on the active material to electric charge while electromagnetic generators make use of the relative motion between a conductor and a magnetic flux to induce charge in the conductor. The existent kinetic piezoelectric generators including human-powered and vibration-based devices are comprehensively addressed. In addition, the electromagnetic generators which include resonant, rotational, and ?hybrid? devices are reviewed. In the conclusion part of this paper, a comparison between the transduction methods and future application trends is given.

Kinetic Energy Harvesting Using Piezoelectric and Electromagnetic Technologies—State of the Art

The behaviour as high temperature gas sensors of MOS capacitors and tunnel MOS diodes with Pt/TaSi/sub x/ catalytic gates fabricated on 6H-SiC substrates is presented The electrical characterization of the both types of devices as a function of the operating temperature and in the presence of gases CO, NO/sub 2/ and C/sub 3/H/sub 8/ has been performed The best results have been obtained for MOS capacitors after their annealing in alternate pulses of 1% C/sub 3/H/sub 8/ and 1% O/sub 2/ at temperatures between 300 and 500/spl deg/C Their maximum response has been 80 mV to 1000 ppm of CO at 250/spl deg/C and 71 mV to 10 ppm of NO/sub 2/ at 310/spl deg/C On the other hand, the tunnel MOS diodes show worse sensitive to these gases, with a maximum response of 1 mV to 1000 ppm of CO at 250/spl deg/C and 600 /spl mu/V to 10 ppm of NO/sub 2/ at 310/spl deg/C

Electrical response of MOSiC gas sensors to CO, NO/sub 2/ and C/sub 3/H/sub 8/

Piezoresistive Microcantilevers forBiomolecularForceDetection

The purpose of this work is the analysis of reliable wire bonding schemes for power SiC diodes working at high temperature. The surge current and the power cycling behavior of different wire bonding technologies are analyzed. A dedicated test bench was developed for the surge current and the power cycling reliability tests [1], [2], [3], [4]. It allows an accelerated reliability test, 105 cycles takes just 3 hours. The 10ms half-sinusoidal current pulse test allows observing the effect of the diode's self-heating. The power cycling capability was analyzed using a new concept [1] of observing the evolution of the dissipated energy per pulse, whose increase under constant current test pulse indicates the degradation of the device. These tests were helpful for chosen an enhanced bonding technology able to work at T junctio =300°C.)

Accelerated test for reliability analysis of SiC diodes

Ibanez, N., Montserrat, J. M. & Soriano, I.: Collections from the Royal Spanish Expeditions to Latin America in the Institut Botanic de Barcelona (BC), Spain. — Willdenowia 36 (Special Issue): 595–599. —ISSN 0511-9618; © 2006 BGBM Berlin-Dahlem. doi:10.3372/wi.36.36156 (available via http://dx.doi.org/) The collections from the Royal Spanish Expeditions to Latin America conserved in the Institut Botanic de Barcelona, comprising 695 specimens, illustrate the changing fortunes in the study of the flora of tropical America by Spanish botanists and their herbarium material. We present data on the collectors, the collection localities and the expeditions, and as electronic supplement, a list of all specimens with collecting data and the determinations on the sheets.

/pdf/collections-from-the-royal-spanish-expeditions-to-latin-4g7kocf09i.pdf

Collections from the Royal Spanish Expeditions to Latin America in the Institut Botànic de Barcelona (BC), Spain

Several edge termination structures for high voltage 4H-SiC devices compatible with a planar MOSFET fabrication process are analyzed in this paper. The edge terminations' efficiency has been analyzed on PiN diodes with breakdown voltage capabilities ranging from 2–5kV fabricated with full MOSFET process. Different edge terminations consisting in JTEs and FGRs, and a combination of JTEs and FGRs have been implemented. Experimental results show a good efficiency of the implemented edge terminations. It is shown that FGRs could be an effective cost solution for high voltage devices. Moreover, the edge termination combining JTE and FGRs shows a better tolerance of the JTE dose for maximizing the breakdown voltage, and the same edge termination design allows obtaining a good efficiency for both 2 and 5kV PiN diodes.

Experimental analysis of planar edge terminations for high voltage 4H-SiC devices

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