Josep Montserrat
Spanish National Research Council
146 Papers
784 Citations
Josep Montserrat is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Ion implantation & Gate oxide. The author has an hindex of 19, co-authored 146 publications. Previous affiliations of Josep Montserrat include Autonomous University of Barcelona.
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Papers
Analysis of Structural Transformations in High Fluence Nitrogen Ion Implanted Aluminium
Luisa Calvo,Alejandro Pérez-Rodríguez,Albert Romano-Rodriguez,J.J. Moranteand,Josep Montserrat +4 more
TL;DR: In this paper, structural analysis of Al layers on Si obtained by sputtering at different conditions and implanted with nitrogen (with doses of 2.5×1017 and 5 ×1017 N2+ ions/cm2, energy 150 keV, room temperature) is performed by SRP, SIMS and TEM measurements.
Indirect aluminum incorporation for N/P/N junctions formation in silicon
Phillippe Godignon,E. Morvan,Josep Montserrat,X. Jorda,Miquel Vellvehi,David Flores,Jose Rebollo,José Antonio Alloza Millán +7 more
- 07 Oct 1997
TL;DR: In this article, a new method for Aluminum and Arsenic inclusion into silicon based on recoil implantation has been presented, where aluminum has been implanted through an Al layer and a silicon oxide layer.
IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes
Florian Chevalier,Javier León,Xavier Perpiñà,Dominique Tournier,Xavier Jordà,Josep Montserrat,Phillippe Godignon +6 more
TL;DR: In this paper, the geometry of a high voltage (1200 V) vertical JFET made with 4H silicon carbide, inspired by SIT or commercial solutions like Semisouth's one, was designed allowing an easy integration of a free wheel diode.
As-al recoil implantation through si3n4 barrier layer
TL;DR: In this paper, a Si 3 N 4 screen layer was used to solve the problem of poor efficiency of the recoil + annealing process when no barrier or an oxyde screen layers are used.
Characterization of a 4H-SiC High Power Density Controlled Current Limiter
Dominique Tournier,Phillippe Godignon,Josep Montserrat,Dominique Planson,Christophe Raynaud,Mihai Lazar,Jean-Pierre Chante,F. Sarrus,Christian Bonhomme,J.-F. de Palma +9 more
TL;DR: In this article, the N type Ni/SiC contact in the range of 175 K-450 K was measured for an applied drain to source voltage of 100 V and exhibits high power density capabilities of SiC VJFET as a controlled current limiter.