Josep Montserrat
Spanish National Research Council
146 Papers
784 Citations
Josep Montserrat is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Ion implantation & Gate oxide. The author has an hindex of 19, co-authored 146 publications. Previous affiliations of Josep Montserrat include Autonomous University of Barcelona.
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Papers
Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization
Matthieu Florentin,Joan Marc Rafi,Florian Chevalier,Victor Soler,Leszek Konczewicz,Sylvie Contreras,Sandrine Juillaguet,Josep Montserrat,Philippe Godignon +8 more
TL;DR: In this article, a charge pumping characterization has been carried out on 4H-SiC nMOSFETs built with different SiC doping processes, and three different CP methods have been used for Dit characterization.
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Study of recoil implantation technique for deep low doped junction formation with aluminum
Phillippe Godignon,E. Morvan,Josep Montserrat,Xavier Jordà,Miquel Vellvehi,Salvador Hidalgo,Jose Rebollo +6 more
TL;DR: In this paper, a new method for aluminium inclusion into silicon based on recoil implantation is presented, where argon ions have been implanted through an Al layer deposited on a silicon substrate.
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Analysis of the SiO2 defects originated by phosphorus implantation in MOS structures
TL;DR: In this paper, the effect of the P + implantation in the dose range 10 11 −10 13 cm −2 and annealing treatment methods on the carrier trapping centres concentration in bulk SiO 2 and the interface-state density at the SiO2 Si interface was studied.
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High channel mobility in 4H-SiC N-MOSFET using N 2 O oxidation combined with Boron diffusion treatment
Maria Cabello,Victor Soler,Josep Montserrat,Jose Rebollo,Philippe Godignon,José Millan +5 more
- 01 Feb 2017
TL;DR: In this article, a gate oxide configuration, including a Boron treatment, is reported, which is designed to improve the SiO 2 /SiC interface quality in 4H-SiC N-MOSFETs.
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Boron Electrical Activation in SOI Compared to Bulk Si Substrates
María Aboy,Lourdes Pelaz,Pedro López,Josep Montserrat,F.J. Bermudez +4 more
- 16 Jul 2007
TL;DR: In this article, the influence of the Si/SiO2 interface on the formation of B clusters is investigated by comparing experimental data and atomistic simulations in bulk Si and SOI materials.
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