Josep Montserrat
Spanish National Research Council
146 Papers
784 Citations
Josep Montserrat is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Ion implantation & Gate oxide. The author has an hindex of 19, co-authored 146 publications. Previous affiliations of Josep Montserrat include Autonomous University of Barcelona.
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Papers
Raman spectroscopy analysis of nitrogen ion implantation in silicon and correlation with transmission electron microscopy
Alejandro Pérez-Rodríguez,Albert Romano-Rodriguez,Joan Ramon Morante,Jaume Esteve,Josep Montserrat +4 more
TL;DR: In this paper, the evolution of these features with the annealing treatments (up to 1150°C) is studied, and the presence of silicon nitride precipitates in the silicon subsurface region, and formation of a nitrogen rich polycrystalline Si layer with Si3N4 grains.
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A study of the thermal oxidation of TaSi/sub 2/ and Ta/sub 2/Si silicides to form dielectric layers for MIS structures on 4H-SiC
Amador Pérez-Tomás,Phillippe Godignon,Narcis Mestres,Josep Montserrat,J. Millan +4 more
- 19 Dec 2005
TL;DR: In this paper, the physical and electrical properties of the insulator layers produced by the deposition of the Ta2Si and TaSi2 tantalum silicides on 4H-SiC substrates and subsequent oxidation are compared.
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Studies on Floating Contact Press-Pack Diodes Surge Current Capability
TL;DR: In this paper, the surge current failure analysis for the press-pack SiC diodes is described together with a simplified unidimensional model for the temperature evaluation at the failure point.
1
•Proceedings Article
Simulation and Experimental Results of Al Doping by Ion Beam Mixing Technique for Deep Low Doped Junction Formation
Phillippe Godignon,E. Morvan,Josep Montserrat,Xavier Jordà,Miquel Vellvehi,Salvador Hidalgo,Jose Rebollo +6 more
- 01 Sep 1996
TL;DR: In this paper, a method for aluminum inclusion into silicon based on ion mixing is presented, where Argon ions are implanted through a Al layer deposited on a silicon substrate and experiments consisting in implantation + annealing have been carried out in order to obtain low doped and deep P-N juntions.
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