Josep Montserrat
Spanish National Research Council
146 Papers
784 Citations
Josep Montserrat is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Ion implantation & Gate oxide. The author has an hindex of 19, co-authored 146 publications. Previous affiliations of Josep Montserrat include Autonomous University of Barcelona.
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Papers
Electromagnetic inertial microgenerators for vibrational energy scavenging: Implementation of a Si technology based modular process for optimised
N. Fondevilla,Christophe Serre,S. Martinez,Alejandro Pérez-Rodríguez,Joan Ramon Morante,Emile Martincic,Josep Montserrat,Jaume Esteve +7 more
- 09 Apr 2008
TL;DR: In this paper, a Si-based modular process where the em converter and the resonator are micromachined separately was used to produce power levels in the range of 50 muW?s and output voltages of hundreds of mV.
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Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts
Gabriel Ferro,Maher Soueidan,Christophe Jacquier,Phillippe Godignon,Thomas Stauden,Jörg Pezoldt,Mihai Lazar,Josep Montserrat,Yves Monteil +8 more
TL;DR: Al-Si and Ge-Si systems were studied for selective epitaxial growth (SEG) of 4H-SiC by the Vapour-Liquid-Solid mechanism as mentioned in this paper.
2
4H-SiC MIS structures using oxidized Ta2Si as high-k dielectric
Amador Pérez-Tomás,Phillippe Godignon,Narcis Mestres,Dominique Tournier,Josep Montserrat,José Millan +5 more
TL;DR: In this paper, a mixture of SiO2 and Ta2O5 insulator films has been obtained after oxidation in dry O2, and the electrical characteristics of deposited and oxidized Ta2Si on 4H-SiC and Si samples have been obtained and compared.
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SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates
TL;DR: In this paper, the fabrication of freestanding SiC microstructures on SOI and semi-insulating silicon substrates is reported and a new concept for reducing the gap between resonators and electrodes by the uses of bistable mobile electrodes is introduced.
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High Power Density SiC 450A AccuMOSFET for Current Limiting Applications
Dominique Tournier,Pascal Bevilacqua,Dominique Planson,Hervé Morel,Pierre Brosselard,Josep Montserrat,André Lhorte,S. Carcouet,D. Leonard +8 more
TL;DR: In this paper, the authors presented the design, manufacture and characterization of silicon carbide accuMOSFET of high power density ratings, able to limit the current to 450A @ 350V.
1