Energy harvesting generators are attractive as inexhaustible replacements for batteries in low-power wireless electronic devices and have received increasing research interest in recent years. Ambient motion is one of the main sources of energy for harvesting, and a wide range of motion-powered energy harvesters have been proposed or demonstrated, particularly at the microscale. This paper reviews the principles and state-of-art in motion-driven miniature energy harvesters and discusses trends, suitable applications, and possible future developments.

/pdf/energy-harvesting-from-human-and-machine-motion-for-wireless-3lsf4oudvo.pdf

Energy Harvesting From Human and Machine Motion for Wireless Electronic Devices

Power consumption is forecast by the International Technology Roadmap of Semiconductors (ITRS) to pose long-term technical challenges for the semiconductor industry. The purpose of this paper is threefold: (1) to provide an overview of strategies for powering MEMS via non-regenerative and regenerative power supplies; (2) to review the fundamentals of piezoelectric energy harvesting, along with recent advancements, and (3) to discuss future trends and applications for piezoelectric energy harvesting technology. The paper concludes with a discussion of research needs that are critical for the enhancement of piezoelectric energy harvesting devices.

/pdf/powering-mems-portable-devices-a-review-of-non-regenerative-30r5zxggdp.pdf

Powering MEMS portable devices—a review of non-regenerative and regenerative power supply systems with special emphasis on piezoelectric energy harvesting systems

Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.

/pdf/review-semiconductor-piezoresistance-for-microsystems-2i2jehwa4g.pdf

Review: Semiconductor Piezoresistance for Microsystems

Journal of Applied physics,Vol.33 : 1962年に発表されたレオロジー関連の論文

This paper presents the latest progress in kinetic energy harvesting for wide applications ranging from implanted devices and wearable electronic devices to mobile electronics and self-powered wireless network nodes. The advances in energy harvesters adopting piezoelectric and electromagnetic transduction mechanisms are presented. Piezoelectric generators convert mechanical strain on the active material to electric charge while electromagnetic generators make use of the relative motion between a conductor and a magnetic flux to induce charge in the conductor. The existent kinetic piezoelectric generators including human-powered and vibration-based devices are comprehensively addressed. In addition, the electromagnetic generators which include resonant, rotational, and ?hybrid? devices are reviewed. In the conclusion part of this paper, a comparison between the transduction methods and future application trends is given.

Kinetic Energy Harvesting Using Piezoelectric and Electromagnetic Technologies—State of the Art

Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs

This paper deals with the comparison of several MOS structures with different rapid thermal oxidation processes (RTO) carried out on Off and On-axis SiC material. A first set contains MOS capacitance structures on n-epitaxial layers, while a second set of MOS capacitance are built on p-implanted layers. Both sets include On and Off-Axis angle cuts. Furthermore, n-MOSFETs have been fabricated on On-axis p-implanted layers with the best oxidation process selected from the MOS capacitance study. The final objective is to show the performances of these On-axis p-implanted n-MOSFETs and to evidence the associated lower surface roughness at the SiO2/SiC interface.

Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC

In this paper, we propose new designs of Schottky, JBS and PiN diodes, which process technology is compatible with that of vertical power SiC JFETs. Three novel diode designs are proposed and we report their electrical characteristics. The P+ buried layer implant of the JFET is used for the PiN anode formation and for the P+ islands of the JBS. The Schottky diode differs from a standard Schottky diode since buried rings below the Schottky contact region have been included and the anode metal layer also contacts the buried P+ region at the diode periphery. With this last approach, the resulting Schottky diodes show low leakage currents and surge current capability, with a lower on-state voltage than the JBS.

New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process

The analysis of the etch-stop properties of layers obtained by substoichiometric nitrogen-ion implantation and annealing in silicon has been performed as a function of the implantation conditions. The analysis of the etching efficiency has been tested in TMAH-IPA systems. The results obtained show the need to implant at doses higher than 2*1017 cm-2 to obtain etch-stop layers stable under high-temperature annealing. So, for implantation doses of 5*1017cm-2, layers stand unetched for times longer than 2 h. The preliminary structural analysis of the samples suggests the presence of an amorphous silicon nitride layer for higher implantation doses.

http://iopscience.iop.org/article/10.1088/0960-1317/3/3/012/pdf

Analysis of buried etch-stop layers in silicon by nitrogen-ion implantation

52 p. ; il. col. -- El libro pertenece a la coleccion "Monografies del Museu d'historia. Col·leccio La ciutat del Born. Barcelona 1700"

Les plantes ornamentals i la botànica

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