Energy harvesting generators are attractive as inexhaustible replacements for batteries in low-power wireless electronic devices and have received increasing research interest in recent years. Ambient motion is one of the main sources of energy for harvesting, and a wide range of motion-powered energy harvesters have been proposed or demonstrated, particularly at the microscale. This paper reviews the principles and state-of-art in motion-driven miniature energy harvesters and discusses trends, suitable applications, and possible future developments.

/pdf/energy-harvesting-from-human-and-machine-motion-for-wireless-3lsf4oudvo.pdf

Energy Harvesting From Human and Machine Motion for Wireless Electronic Devices

Power consumption is forecast by the International Technology Roadmap of Semiconductors (ITRS) to pose long-term technical challenges for the semiconductor industry. The purpose of this paper is threefold: (1) to provide an overview of strategies for powering MEMS via non-regenerative and regenerative power supplies; (2) to review the fundamentals of piezoelectric energy harvesting, along with recent advancements, and (3) to discuss future trends and applications for piezoelectric energy harvesting technology. The paper concludes with a discussion of research needs that are critical for the enhancement of piezoelectric energy harvesting devices.

/pdf/powering-mems-portable-devices-a-review-of-non-regenerative-30r5zxggdp.pdf

Powering MEMS portable devices—a review of non-regenerative and regenerative power supply systems with special emphasis on piezoelectric energy harvesting systems

Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.

/pdf/review-semiconductor-piezoresistance-for-microsystems-2i2jehwa4g.pdf

Review: Semiconductor Piezoresistance for Microsystems

Journal of Applied physics,Vol.33 : 1962年に発表されたレオロジー関連の論文

This paper presents the latest progress in kinetic energy harvesting for wide applications ranging from implanted devices and wearable electronic devices to mobile electronics and self-powered wireless network nodes. The advances in energy harvesters adopting piezoelectric and electromagnetic transduction mechanisms are presented. Piezoelectric generators convert mechanical strain on the active material to electric charge while electromagnetic generators make use of the relative motion between a conductor and a magnetic flux to induce charge in the conductor. The existent kinetic piezoelectric generators including human-powered and vibration-based devices are comprehensively addressed. In addition, the electromagnetic generators which include resonant, rotational, and ?hybrid? devices are reviewed. In the conclusion part of this paper, a comparison between the transduction methods and future application trends is given.

Kinetic Energy Harvesting Using Piezoelectric and Electromagnetic Technologies—State of the Art

http://esl.ecsdl.org/content/14/6/G42.full.pdf

Rapid Growth of Oxide Films on SiC by Photo-Assisted Mechanism

Resistless ion implantation of sub-micron scale features through nano-stencil

This work demonstrates a functional fabricated high temperature compensated Voltage Reference (VR) integrated circuit on 4H-SiC material. The study starts with an experimental analysis on the feasibility on silicon carbide (SiC) of the widely used bandgap reference concept both with Schottky and bipolar diodes. Then an original solution is proposed for a special finger type MESFET. Our approach of the MESFET design overcomes the typical embedded drain leakage of finger type MESFET. This device design was specially developed for using in analog schematics on SiC. Further, an original VR schematic is proposed avoiding the bandgap reference topology and accordingly avoiding an operational amplifier (OpAmp), which is not yet developed on SiC. The performed measurements on the fabricated integrated circuits show a temperature coefficient (TC) comparable to the normal bandgap voltage references on silicon but this SiC circuit is able to work up to 300◦C, compared to 125◦C for silicon or 200◦C for SOI (silicon on insulator). A very important progress of our work is the integration of the presented circuit on the same SiC chip with a power lateral MESFET. Additionally, the circuit contains a linear temperature sensor useful for over temperature protection. Key-words: integrated circuit, bandgap reference, silicon carbide, SiC, voltage reference, high temperature, thermal compensated, power, MESFET.

High Temperature Compensated Voltage Reference Integrated Circuits on 4H-SiC Material

On account of its chromosome number (2n=36) and also of morphological peculiarities concerning root stock, stem, leaves and seeds, Minuartia valentina (Pau) Mateo & Figuerola shows affinities s with species of the Lanceolatae Section. A study of the seed- coat with the S.E.M. confirms its relationship with this Section (flat tongue-shaped dorsal tubercles). Therefore M. valentine cannot be longer considered as a subspecies of M. verna. The authors propose to transfer the endemic taxon of mountains of Valencia (East Spain) to the Lanceolatae Section and to create a new monospecific series: Series Valentinae Celebioglu, Favarger & J. M. Monts.

http://digital.csic.es/bitstream/10261/102602/1/sur_position_systematique_affinites_minuartia_valentina_montserrat1990.pdf

Sur la position systématique et les affinités du Minuartia valentina (Pau) Mateo & Figuerola, endémique espagnole

Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties

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