Josep Montserrat
Spanish National Research Council
146 Papers
784 Citations
Josep Montserrat is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Ion implantation & Gate oxide. The author has an hindex of 19, co-authored 146 publications. Previous affiliations of Josep Montserrat include Autonomous University of Barcelona.
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Papers
Prototyping and Characterization of 1.2KV SIC Schottky Diodes for TWTA Application: The Challenge to Meet the User Specification
Enrique Maset,Esteban Sanchis-Kilders,S. Massetti,Josep Montserrat,Philippe Godignon,J. C. Moreno,E. Cordero,J. Bevan +7 more
- 01 Jan 2017
TL;DR: In this article, the main features of SiC base material (high energy gap, high electric field breakdown in combination with reasonably high electron mobility and high thermal conductivity 3 times higher than Si -) led to the following expected and in some cases already proven capabilities for power application: low on-state voltage (100 to 200 times lower on resistance x total gate charge with respect to Si), low leakage currents (order of magnitude lower than in Si devices), low recovery charge, fast turn-on and turn-off, high blocking voltage (> 2 KV), high power density,
Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs
Victor Soler,Maria Cabello,Viorel Banu,Josep Montserrat,Jose Rebollo,Philippe Godignon,Enea Bianda,Lars Knoll,Lukas Kranz,Andrei Mihaila +9 more
TL;DR: In this article, the electrical behavior of high-voltage (HV) SiC MOSFETs, being the main motivation to check their robustness, is addressed.
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Structural characterisation of nitrogen ion implantation into silicon for sensor technology
Albert Romano-Rodriguez,A. El-Hassani,Josep Samitier,Alejandro Pérez-Rodríguez,S. Martinez,Joan Ramon Morante,Jaume Esteve,Josep Montserrat +7 more
TL;DR: In this article, buried etch-stop layers in silicon are formed by implantation of a substoichiometric dose of nitrogen and annealing at temperatures up to 1150°C.
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Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness
Maria Cabello,Matthieu Florentin,Mihaela Alexandru,Bernd Schmidt,Jose Rebollo,Josep Montserrat,José Millan,Phillippe Godignon +7 more
TL;DR: In this paper, the electrical behavior of irradiated and post-irradiation annealed nMOSFETs with an implanted p-type body and having a N2O oxynitrided gate oxide is analyzed.
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Boron diffusion and activation in SOI and bulk Si: The role of the buried interface
TL;DR: In this paper, the influence of the Si/SiO2 interface on the formation of B clusters is investigated, and the effect of the interface on B electrical activation is mainly related to its influence on end of range defect (EOR) evolution after regrowth which in turn affects B deactivation and reactivation.
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