Josep Montserrat
Spanish National Research Council
146 Papers
784 Citations
Josep Montserrat is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Ion implantation & Gate oxide. The author has an hindex of 19, co-authored 146 publications. Previous affiliations of Josep Montserrat include Autonomous University of Barcelona.
Chat about Author
Papers
Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate
Christophe Jacquier,Gabriel Ferro,Phillippe Godignon,Josep Montserrat,Olivier Dezellus,Yves Monteil +5 more
TL;DR: In this paper, a new approach for SiC selective growth by vapour-liquid-solid (VLS) mechanism in which propane feeds an Al-Si melt was developed, where a stacking consisting in 500 nm thick Si layer followed by 1 μm thick Al layer was deposited on top of a 4H-SiC, 8° off substrate.
4
Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt
Phillippe Godignon,Christophe Jacquier,Servane Blanqué,Josep Montserrat,Gabriel Ferro,Sylvie Contreras,Marcin Zielinski,Yves Monteil +7 more
TL;DR: In this paper, the VLS mechanism in Al-Si melt has been used for growing epitaxial 4H-SiC layers at low temperature (1100°C) with a high amount of Aluminum (>10 20 at.cm 2 ).
4
Current Sensing for SiC Power Devices
Dominique Tournier,Miquel Vellvehi,Philippe Godignon,Josep Montserrat,Dominique Planson,Franck Sarrus +5 more
TL;DR: In this article, an integrated current sensor has been implemented in a vertical power SiC JFET and its fabrication is reported for the first time, and an experimental current sensing validation is also reported.
4
Mapping of 6H-SiC for implantation control
TL;DR: In this article, the problem of ion implantation control for SiC technology with respect to the channeling phenomenon is addressed, and the beam angle effects on implant profiles and the optimum conditions for control and reproducibility of the process are found.
4
Interfacial properties of thermally oxidized Ta2Si on Si
Amador Pérez-Tomás,Michael R. Jennings,Philip Mawby,José Millan,Phillippe Godignon,Josep Montserrat,E. Rossinyol,Philippe Vennéguès,J. Stoemenos +8 more
TL;DR: In this paper, the authors investigated the interfacial properties of thermally oxidized (850-1050 degrees C) Ta2Si on commercial silicon substrates and observed migration of tantalum pentoxide nanocrystals into the substrate with increasing oxidation temperature.
4