Josep Montserrat
Spanish National Research Council
146 Papers
784 Citations
Josep Montserrat is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Ion implantation & Gate oxide. The author has an hindex of 19, co-authored 146 publications. Previous affiliations of Josep Montserrat include Autonomous University of Barcelona.
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Papers
Impact of layout on the surge current robustness of 1.2 KV SiC diodes
Viorel Banu,Maxime Berthou,Josep Montserrat,Xavier Jordà,Philippe Godignon +4 more
- 01 Oct 2017
TL;DR: In this article, the authors describe experimental surge current evaluation for various layout design of 1.2kV 4H-SiC JBS diodes, and use 10ms sinusoidal power current pulses is able to evidence by I-V characteristic, the temperature developed inside the diode during the power pulse, and the bipolar activation characteristic during the applied power.
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•Journal Article
Typification of the names of some Iberian species described by Lamarck
TL;DR: A significant part of this material was collected at the beginning of the 18th century by Antoine and Bernard de Jussieu around Spain and Portugal as mentioned in this paper, and the historical relationships between these collections must be taken into account when searching for types.
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Polysilicon piezoresistive cantilevers for intermolecular force detection
Guillermo Villanueva,Joan Bausells,Josep Montserrat,Francesc Pérez-Murano +3 more
- 06 Sep 2005
TL;DR: In this article, the authors describe the development of polycrystalline silicon piezoresistive micro/nanocantilevers for the measurement of intermolecular forces in biochemical sensing.
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Improved electrical characteristics of porous germanium photodiode obtained by phosphorus ion implantation
TL;DR: In this article, a porous germanium-based photodiode was used for radiometric measurement in the IR spectral range, where a porous layer was introduced on the active surface to trap the incident optical radiation and to reduce the reflection coefficient fluctuations.
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Ta 2 Si short time thermal oxidized layers in N 2 O and O 2 to form high- k gate dielectric on SiC
Amador Pérez-Tomás,Narcis Mestres,Philippe Godignon,Josep Montserrat,José Antonio Alloza Millán +4 more
TL;DR: In this article, the authors investigated the properties of the oxidation of tantalum silicide (Ta 2 Si) on SiC substrates making this material of interest as insulator for many wide bandgap or compound semiconductors.
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