Josep Montserrat
Spanish National Research Council
146 Papers
784 Citations
Josep Montserrat is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Ion implantation & Gate oxide. The author has an hindex of 19, co-authored 146 publications. Previous affiliations of Josep Montserrat include Autonomous University of Barcelona.
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Papers
6H-SiC MOSFET structures for power device fabrication process characterisation
Phillippe Godignon,S. Berberich,E. Morvan,X. Jorda,David Flores,Josep Montserrat,Jose Rebollo,L. Ottaviani +7 more
- 05 Oct 1999
TL;DR: In this article, N-channel MOSFETs on Silicon Carbide (SiC) have been fabricated in order to characterise the SiC process technology, and from the analysis of MOSFLET and test structure electrical characteristics, they can extract parameters concerning channel properties, oxide and interface quality as well as ohmic contact resistivity.
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Structural analysis of buried AlN thin films formed by nitrogen implantation into microelectronics grade aluminium
Luisa Calvo,Alejandro Pérez-Rodríguez,Albert Romano-Rodriguez,Joan Ramon Morante,Josep Montserrat +4 more
TL;DR: In this paper, the structural analysis of AlN thin films obtained by high dose nitrogen ion implantation in microelectronics grade aluminium layers is performed by transmission electron microscopy (TEM), spreading resistance probe (SRP), secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD) and XPS measurements, showing the gettering of the main impurities in the Al matrix (silicon and oxygen) in the buried implanted layer, as well as the formation of a buried continuous dielectric layer of polycrystalline A1N at
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Piezoresistive Microcantilevers for Biomolecular Force Detection
Guillermo Villanueva,Gemma Rius,Josep Montserrat,Francesc Pérez-Murano,Joan Bausells +4 more
- 16 Jul 2007
TL;DR: In this article, a piezoresistive microcantilevers for the detection of biomolecules by the measurement of intermolecular binding forces is presented, which can be obtained with polycrystalline silicon cantilevers with submicron thickness and width in the micrometer range.
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Ta2Si Thermal Oxidation: A Simple Route to a High-k Gate Dielectric on 4H-SiC
Amador Pérez-Tomás,Phillippe Godignon,Josep Montserrat,José Millan,Narcis Mestres,Philippe Vennéguès,J. Stoemenos +6 more
TL;DR: In this article, the bulk properties, the surface morphology, and the electrical interfacial characteristics of the Ta 2 O 5 -based high-k dielectric (e r ∼ 20) produced by Ta 2 Si deposition and subsequent oxidation directly on 4H-SiC substrates in the oxidation temperature range 750-1050°C were investigated.
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Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication
TL;DR: In this article, the in-situ surface preparation by H2 annealing has been shown to increase the channel mobility and electrical stability with respect to constant bias stress at low-field.
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