Josep Montserrat
Spanish National Research Council
146 Papers
784 Citations
Josep Montserrat is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Ion implantation & Gate oxide. The author has an hindex of 19, co-authored 146 publications. Previous affiliations of Josep Montserrat include Autonomous University of Barcelona.
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Papers
El bosc mesòfil a les Muntanyes Catalanídiques septentrionals
TL;DR: In this paper, the structure, floristic composition and ecology of mesophilous woodlands in the northern part of the Catalanidic range are described. And the variability of these woodlands is analyzed.
All-stencil transistor fabrication on 3D silicon substrates
Luis Guillermo Villanueva,Oscar Vazquez-Mena,Cristina Martin-Olmos,Veronica Savu,Katrin Sidler,Josep Montserrat,Philippe Langlet,C Hibert,P Vettiger,Joan Bausells,Jürgen Brugger +10 more
TL;DR: In this paper, the authors demonstrate the completely resistless all-through-stencil fabrication of electronic components, by performing all essential fabrication steps (implantation, etching and metallization) using stencil lithography.
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Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
Dominique Tournier,Phillippe Godignon,Josep Montserrat,Dominique Planson,Jean-Pierre Chante,F. Sarrus +5 more
TL;DR: In this paper, the integration compatibility of lateral MESFETs within a vertical power JFET fabrication technology is evaluated, and the results demonstrate VJFET and MES-FET compatibility.
•Journal Article
Type specimens of names of species authored by Pourret conserved in the Salvador herbarium (BC).
TL;DR: Four lectotypes are designated (for Acer hispanicum, Achillea chamaemelifolia, Rumex pyrenaicus and Vicia pyrenaica) and the existence of seven isotypes of species names authored by Pourret are noted that are conserved in BC-Salvador and in MAF-Pourret herbaria.
Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs
Maria Cabello,Victor Soler,Lars Knoll,Josep Montserrat,Jose Rebollo,Andrei Mihaila,Philippe Godignon +6 more
TL;DR: In this article, an alternative gate oxide configuration based on a boron treatment was proposed in order to enhance the SiO2/SiC interface quality, enabling high channel mobility n-channel 4H-SiC lateral MOSFETs.
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