Micro-light-emitting diodes (μLEDs) are getting much attention in display industry because of their outstanding optical and electrical characteristics. μLEDs have several advantages over liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs). μLEDs are showing long lifetimes, high reliability, high power efficiencies, high brightness, and fast response times with tiny pixels. However, for commercial usage, the high production cost and low external quantum efficiency (EQE) are the major hurdles. In this review, we briefly discuss the breakthroughs in μLED technology, fabrication methods, optical/electrical characteristics, and challenges for display applications. In addition, the development of monolithic μLEDs and general device characteristics combined with various quantum dot patterning processes are systematically discussed. Potential solutions to address these challenges are also presented case by case. 

Technology and Applications of Micro-LEDs: Their Characteristics, Fabrication, Advancement, and Challenges

Effects of indium surfactant and MgN intermediate layers on surface morphology and crystalline quality of nonpolar a-plane AlGaN epi-layers

MgN/AlGaN insertion layers were applied for the first time to the growth of nonpolar a-plane AlGaN epilayers by metal organic chemical vapor deposition technology. The full width at half maximum of the X-ray rocking curve for the a-plane AlGaN epilayers was reduced by approximately 50.6% and the root-mean-square roughness value of the surface was reduced by 74% by applying the MgN/AlGaN insertion layers with an optimized number of insertion pairs. These results reveal that the compressive strain within the a-plane AlGaN epilayers was effectively reduced, leading to significant improvements in crystalline quality and surface morphology. These improvements are very helpful in fabricating high-quality AlGaN-based ultraviolet light-emitting diodes.

https://iopscience.iop.org/article/10.7567/APEX.10.045503/pdf

Epitaxial growth and characterization of nonpolar a-plane AlGaN films with MgN/AlGaN insertion layers

Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing

We evaluated the effects of grid patterns (GPs) realized on 2-inch sapphire substrates by simple laser treatment on the device characteristics of InGaN/GaN light-emitting diodes (LEDs). The degrees of wafer bowing for the LEDs with distances between the GPs of 1 (GP1-LED), 2 (GP2-LED), and 3 mm (GP3-LED) were 100.05, 100.43, and 101.59 µm, respectively, which are significantly improved compared to that (108.06 µm) of a conventional LED (C-LED) without GPs. Consequently, a blue-shift of the emission wavelength for the GP-LEDs was observed compared to the C-LED via alleviation of the quantum-confined stark effect. A comparative study of the fluorescence microscopy images of the C-LED and GP2-LED samples showed a significant reduction of threading dislocations as a result of the GPs. In the electroluminescence mapping results for the entire 2-inch region, the standard deviations of the emission wavelengths were 1.64, 1.49, and 2.55 nm for the GP1-LED, GP2-LED, and GP3-LED samples, respectively, which are smaller than that of the C-LED (2.66 nm). In addition, the average output power of the GP2-LED was 8.5% higher than that of the C-LED.

Optical characteristics of InGaN/GaN light-emitting diodes depending on wafer bowing controlled by laser-treated grid patterns

MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

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MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain