Introduction.- Electrodeposition of metallic precursors.- Conversion of precursors into compound semiconductors.- The influences of sulfurisation variables and precursor composition on the development of the CZTS phase.- Opto-electronic properties of Cu2ZnSnS4 films: influences of growth conditions and precursor composition.- Conclusions & recommendations for further studies.

Copper Zinc Tin Sulfide Thin Films for Photovoltaics

The crystal structure of covellite has been studied under pressure up to 33 kbar based on single-crystal diffraction intensities collected with a four-circle diffractometer. The contraction of the unit cell takes place in such a way that the axial ratio e/a is kept nearIy constant, the cell volume at 1 bar being reduced by about 5% at 33 kbar. With the contraction of the Cu - S bonds the sulfur-sulfur bond of the S2 group shows a trend of lengthening in a way similar to the relation between S - S and M - S bonds in the compounds MS2 (M = Cu, Ni, Co, Fe) having the pyrite structure type.

The crystal structure of covellite CuS under high pressure up to 33 kbar Locality: Kosaka mine, Akita Prefecture, Japan Sample: P = 12 kbar

Investigation of surface phase formation during Sn-rich growth of Cu2ZnSnS4 polycrystlalline thin films for solar cells

........................................................................................................................ i LIST OF FIGURES ............................................................................................................ ii ACKNOWLEDGMENTS ................................................................................................. iii CHAPTERS

Combinatorial investigation of the effects of sodium on Cu 2ZnSnSe4 polycrystalline thin films

As shall be seen, these three stages occur relatively quickly. In this chapter, the formation of Cu2ZnSnS4 from the precursor will be described, and a model will be proposed that accounts for the observed sequence of phase formation when a rapid heating rate is used. Further changes occurring in the films over longer timescales will be dealt with in the following chapter.

Conversion of Precursors into Compound Semiconductors

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Conversion of Precursors into Compound Semiconductors