Methods for depositing metal oxide layers on metal surfaces are described The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol These methods do not oxidize the underlying metal layer

Methods For ALD Of Metal Oxides On Metal Surfaces

Layer-by-layer thickness control of an electroplated film can be achieved by using a cyclic deposition process. The cyclic process involves forming a layer (or partial layer) of hydrogen on a surface of the substrate, then displacing the layer of hydrogen with a layer of metal. These steps are repeated a number of times to deposit the metal film to a desired thickness. Each step in the cycle is self-limiting, thereby enabling atomic level thickness control.

Layer-by-layer deposition using hydrogen

Die Erfindung betrifft ein Verfahren zur plasmaunterstutzten Abscheidung von Aluminiumoxiddunnschichten auf Halbleiterwafern fur die Herstellung von Wafersolarzellen mit folgenden Verfahrensschritten: Bereitstellen einer Inline PECVD-Anlage mit mindestens einer Plasmakammer (1) ausgerustet mit einer in der Plasmakammer angeordneten Plasmaelektrode (10), einem Vakuumpumpsystem (11) und einer Inline-Transporteinrichtung (12) fur den liegenden Transport von Halbleiterwafern entlang einer Inline-Transportrichtung (T), Anordnen von Halbleiterwafern auf der Inline-Transporteinrichtung (12), Einschleusen der Inline-Transporteinrichtung (12) mit den Halbleiterwafern in die Plasmakammer (1), Einleiten eines sauerstoffhaltigen Gases an einem ersten Gaseinlass (13) in die aktivierte Plasmakammer (1), Einleiten eines aluminiumhaltigen Gases an einem vom ersten Gaseinlass (13) beabstandeten weiteren Gaseinlass (14) in die aktivierte Plasmakammer (1), wobei der weitere Gaseinlass (14) naher an der Inline-Transporteinrichtung (12) und entfernter von der Plasmaelektrode (10) angeordnet ist als der erste Gaseinlass (13), Bewegen der Inline-Transporteinrichtung (12) entlang der Inline-Transportrichtung (T) durch die Plasmakammer (1), dadurch gekennzeichnet, dass das Einleiten des aluminiumhaltigen Gases in die Plasmakammer (1) in Richtung der Inline-Transportrichtung (T) betrachtet ausschlieslich oder uberwiegend vor der Plasmaelektrode (10) oder ausschlieslich oder uberwiegend hinter der Plasmaelektrode (10) vorgenommen wird. Ferner betrifft die Erfindung eine entsprechende Inline PECVD-Anlage.

Verfahren zur plasmaunterstützten Abscheidung von Aluminiumoxiddünnschichten auf Halbleiterwafern für die Herstellung von Wafersolarzellen und Inline-PECVD-Anlage

Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.

Methods For Low Temperature ALD Of Metal Oxides

A process for plasma deposition of a coating is provided that includes exposure of a surface of a substrate to a source of adsorbate molecules to form a protective layer on the surface. The protective layer is then exposed in-line to a plasma volume to react the protective film to form the coating. This process occurs without an intermediate evacuation to remove the adsorbate molecules prior to contact with the plasma volume. As a result, kinetic ion impact damage to the surface is limited while efficient operation of the plasma deposition system continues.

Deposition of thin films on energy sensitive surfaces

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Deposition of thin films on energy sensitive surfaces