John Howgate
Technische Universität München
23 Papers
204 Citations
John Howgate is an academic researcher from Technische Universität München. The author has contributed to research in topics: Surface modification & Volta potential. The author has an hindex of 10, co-authored 23 publications.
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Papers
Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors
Barbara Baur,John Howgate,H.-G. von Ribbeck,Y. Gawlina,V. Bandalo,G. Steinhoff,Martin Stutzmann,Martin Eickhoff +7 more
TL;DR: In this article, the influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption, and it was shown that Schiff base formation on GaN surfaces modified with an aminopropyltriethriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity.
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Organic functionalization of 3C-SiC surfaces.
Sebastian J. Schoell,Matthias Sachsenhauser,Alexandra Oliveros,John Howgate,Martin Stutzmann,Martin S. Brandt,Christopher L. Frewin,Stephen E. Saddow,Ian D. Sharp +8 more
TL;DR: The functionalization of n-type (100) and (111) 3C-SiC surfaces with organosilanes is demonstrated, indicating that partial passivation of electrically active surface states is achieved.
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Photocatalytic cleavage of self-assembled organic monolayers by UV-induced charge transfer from GaN substrates.
John Howgate,Sebastian J. Schoell,Marco Hoeb,Wiebke Steins,Barbara Baur,Samira Hertrich,Bert Nickel,Ian D. Sharp,Martin Stutzmann,Martin Eickhoff +9 more
TL;DR: The impact of illumination on nand p-type GaN and SiC with covalently bound self-assembledmonolayers (SAMs) formed from octadecyltrimethoxysilane (ODTMS) are studied, which demonstrates that significant and rapid photocatalytic degradation occurs only for n-typeGaN, and demonstrates that the model system for study of chargetransfer processes can be extended to complex biological and hybrid systems in the future.
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Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage
TL;DR: In this paper, the pH response of a GaN/AlN//GaN solution-gate field effect transistor (SGFET) with an AlN barrier of 75nm was analyzed and compared with standard SGFETs with total barrier thickness of 19 and 23nm.
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Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices
Markus Hofstetter,John Howgate,Ian D. Sharp,Maren Funk,Martin Stutzmann,Herwig G. Paretzke,Stefan Thalhammer +6 more
TL;DR: In this paper, the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors was investigated under and following X-ray radiation, including a linear integrated response with dose into the μGy range.
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