John E. Florkey
IBM
14 Papers
153 Citations
John E. Florkey is an academic researcher from IBM. The author has contributed to research in topics: Shielded cable & RFIC. The author has an hindex of 10, co-authored 14 publications.
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Papers
Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
Basanth Jagannathan,Marwan H. Khater,Francois Pagette,Jae-Sung Rieh,David Angell,H. Chen,John E. Florkey,F. Golan,David R. Greenberg,R.A. Groves,S.-J. Jeng,J. Johnson,E. Mengistu,Kathryn T. Schonenberg,C.M. Schnabel,Peter Andrew Smith,Andreas D. Stricker,David C. Ahlgren,Gregory G. Freeman,Kenneth J. Stein,S. Subbanna +20 more
TL;DR: In this paper, a SiGe NPN HBT with unity gain cutoff frequency (f/sub T/) of 207 GHz and an f/sub MAX/ extrapolated from Mason's unilateral gain of 285 GHz was reported.
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SiGe HBTs with cut-off frequency of 350 GHz
Jae-Sung Rieh,Basanth Jagannathan,H. Chen,Kathryn T. Schonenberg,David Angell,Anil K. Chinthakindi,John E. Florkey,F. Golan,David R. Greenberg,S.-J. Jeng,Marwan H. Khater,Francois Pagette,Christopher M. Schnabel,Peter Andrew Smith,Andreas D. Stricker,K. Vaed,Richard P. Volant,David C. Ahlgren,Gregory G. Freeman,K. Stein,Seshadri Subbanna +20 more
- 08 Dec 2002
TL;DR: In this paper, the SiGe HBTs with f/sub T/ of 350 GHz were reported, which is the highest reported f/Sub T/ for any Si-based transistor as well as any bipolar transistor.
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RFCMOS technology from 0.25/spl mu/m to 65nm: the state of the art
John J. Pekarik,David R. Greenberg,Basanth Jagannathan,R. Groves,J.R. Jones,Raminderpal Singh,Anil K. Chinthakindi,X. Wang,Matthew J. Breitwisch,Douglas D. Coolbaugh,P. Cottrell,John E. Florkey,Gregory G. Freeman,Rajendran Krishnasamy +13 more
- 22 Nov 2004
TL;DR: This work discusses some of the challenges of implementing RF designs in CMOS, focusing on those introduced by the changing properties of FETs as technology nodes scale and devices shrink.
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Differentially-shielded monolithic inductors
T.S.D. Cheung,J.R. Long,K. Vaed,R. Volant,Anil K. Chinthakindi,Christopher M. Schnabel,John E. Florkey,Z.X. He,Kenneth J. Stein +8 more
- 03 Dec 2003
TL;DR: The differential shield fulfills all existing metal density requirements, and a compact circuit model is presented that agrees within 8% of measurement.
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SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz
Jae-Sung Rieh,David R. Greenberg,Marwan H. Khater,Kathryn T. Schonenberg,S.-J. Jeng,F. Pagette,Thomas N. Adam,Anil K. Chinthakindi,John E. Florkey,Basanth Jagannathan,J. Johnson,Rajendran Krishnasamy,D. Sanderson,Christopher M. Schnabel,Peter Andrew Smith,Andreas D. Stricker,S. Sweeney,Kunal Vaed,T. Yanagisawa,David C. Ahlgren,K. Stein,Gregory G. Freeman +21 more
- 06 Jun 2004
TL;DR: In this paper, a SiGe HBT with simultaneously optimized f/sub T/ and F/sub max/ of >300 GHz was developed, with peak current gain of 660.
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