John A. Modolo
United States Naval Research Laboratory
10 Papers
74 Citations
John A. Modolo is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Photodetector & Schottky diode. The author has an hindex of 6, co-authored 10 publications.
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Papers
Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides
TL;DR: In this paper, the creation of interface states by ionizing radiation was investigated in MOS capacitors as a function of oxide thickness in the range 6-50 nm, and it was shown that the number of defects at the Si-SiO2 interface increases with oxidation time.
Wafer level high-frequency measurements of photodetector characteristics
TL;DR: This technique meets the need to test high-speed photodetectors at the wafer level using optical excitation with pulse durations of the order of a nanosecond or less and optical spot size diame ters of ~5-150 μm; it also compliments the capability of making electrical measurements at speeds up to 50 GHz.
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Gallium arsenide metal-semiconductor-metal photodiodes as optoelectronic mixers for microwave single-sideband modulation.
Gordon Wood Anderson,L. Eugene Chipman,Francis J. Kub,Doewon Park,Michael Y. Frankel,Thomas F. Carruthers,John A. Modolo,Karl D. Hobart,D. Scott Katzer +8 more
TL;DR: An optical technique for microwave single-sideband modulation that uses GaAs MSM photodiodes as mixers is reported, and modulation of the photodetector bias voltages results in a single- sideband modulation of the microwave signal.
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Planar, linear GaAs detector-amplifier array with an insulating AlGaAs spacing layer between the detector and transistor layers
Gordon Wood Anderson,Nicolas A. Papanicolaou,David I. Ma,Ingham A. G. Mack,John A. Modolo,Fritz J. Kub,C.W. Young,Phillip E. Thompson,J.B. Boos +8 more
TL;DR: In this paper, a planar, linear, parallel channel, ten-element GaAs detector-amplifier arrays with a 70- mu m detector center-to-center spacing have been fabricated using a GaAs-AlGaAs-GaAs epitaxial structure grown on semi-insulating GaAs.
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Photodetectors fabricated on heteroepitaxial GaAs/Si structures grown by molecular beam epitaxy
TL;DR: In this paper, photodetectors were fabricated on GaAs/Si epitaxial structures grown on high resistivity Si substrates by modulated molecular beam epitaxy, and the response measurements were made using a 840nm wavelength pulsed laser with a pulse width of 5ns and rise (t r ) and fall (t f ) times of 200ps.
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