Joël Bleuse
University of Grenoble
20 Papers
57 Citations
Joël Bleuse is an academic researcher from University of Grenoble. The author has contributed to research in topics: Quantum dot & Photonics. The author has an hindex of 7, co-authored 20 publications.
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Papers
Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
C. Himwas,R. Songmuang,Le Si Dang,Joël Bleuse,Laetitia Rapenne,Eirini Sarigiannidou,Eva Monroy +6 more
TL;DR: In this article, structural and optical properties of AlGaN/AlN quantum dot superlattices synthesized by plasma-assisted molecular-beam epitaxy were reported, showing that the peak emission wavelength can be shifted from 320nm to 235nm while keeping the internal quantum efficiency larger than 30%.
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Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core-Shell Nanowires on Silicon.
R. Songmuang,R. Songmuang,Le Thuy Thanh Giang,Le Thuy Thanh Giang,Joël Bleuse,M. Den Hertog,M. Den Hertog,Yann-Michel Niquet,Le Si Dang,Le Si Dang,H. Mariette,H. Mariette +11 more
TL;DR: Experimental results reveal that emission intensity, decay time, and carrier diffusion length of the GaAs NW core strongly depend on the AlGaAs shell thickness but in a nonmonotonic fashion.
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Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells
Luca Redaelli,Anna Mukhtarova,Akhil Ajay,A. Núñez-Cascajero,A. Núñez-Cascajero,S. Valdueza-Felip,Joël Bleuse,Christophe Durand,Joël Eymery,Eva Monroy +9 more
TL;DR: In this paper, the impact of the barrier thickness on the performance of In0.17Ga0.83N multiple-quantum-well (MQW) solar cells is studied.
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Role of Underlayer for Efficient Core–Shell InGaN QWs Grown on m-plane GaN Wire Sidewalls
Akanksha Kapoor,Sylvain Finot,Vincent Grenier,Eric Robin,Catherine Bougerol,Joël Bleuse,Gwénolé Jacopin,Joël Eymery,Christophe Durand +8 more
TL;DR: According to photo- and cathodoluminescence measurements performed at room temperature, an improved efficiency of light emission at 435 nm with internal quantum efficiency > 15 % has been achieved by adding a GaN spacer prior to the growth of QW.
Potential Fluctuations and Localization Effects in CZTS Single Crystals, as Revealed by Optical Spectroscopy
TL;DR: In this paper, the authors studied the effect of order/disorder in the quaternary structure of CZTSSe solar cells and showed that the bandgap and the band tail of localized states just below are dependent on the degree of order and disorder.
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