Jinyu Ni
7 Papers
12 Citations
Jinyu Ni is an academic researcher. The author has contributed to research in topics: Layer (electronics) & Superlattice. The author has an hindex of 3, co-authored 7 publications.
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Papers
Improvement of breakdown and current collapse characteristics of GaN HEMT with a polarization-graded AlGaN buffer
TL;DR: In this paper, a GaN HEMT with a polarization-graded AlGaN buffer is performed by two-dimensional analysis of drift-diffusion simulations, and the bulk trap-induced current collapse of the proposed structure is effectively restrained in contrast to that of conventional HEMTs with either GaN or AlGaNs buffer.
31
Patent
Epitaxial structure for nitride high electron mobility transistors of composite buffer layers
Daqing Peng,Li Zhonghui,Xun Dong,Liang Li,Jinyu Ni,Dongguo Zhang +5 more
- 22 Aug 2012
TL;DR: In this paper, an epitaxial structure for composite buffer layers of AlyGal-yN was proposed, which includes a growth nucleating layer on a substrate, a first buffer layer is arranged on the growth buffer layer, a growth channel layer is placed on the second buffer layer; and a growth barrier layer is positioned on the growing channel layer.
6
Patent
Wide bandgap monocrystal film prepared from multiple buffer layers and method
Li Zhonghui,Daqing Peng,Liang Li,Xun Dong,Jinyu Ni,Dongguo Zhang +5 more
- 29 Aug 2012
TL;DR: In this article, a wide bandgap monocrystal film was prepared from multiple buffer layers and a method was proposed to deal with the high-V/III-ratio aluminum nitride buffer layer.
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Influence of SiH 4 treatment time on the properties of GaN films grown on in-situ SiN x patterned sapphire substrate
Daqing Peng,Zhonghui Li,Dongguo Zhang,Chuanhao Li,Liang Li,Xun Dong,Jinyu Ni,Lei Pan,Weike Luo +8 more
- 01 Oct 2014
TL;DR: In this article, the influence of SiH 4 treatment time on crystalline quality and luminance properities of GaN films was studied and the SiN x mask with modified SiH4 treatment time increased 3D to 2D growth time of high temperature GaN.
2
Patent
AlGaN/GaN heterostructure on silicon substrate and growth method of heterostructure
Lei Pan,Dong Xun,Zhonghui Li,Jinyu Ni +3 more
- 09 Nov 2016
TL;DR: In this paper, an AlGaN/GaN heterostructure on a silicon substrate and a growth method of the heterostructures was described, where the growth technology of the AlN nucleating layer was adjusted, and the AlxGa1-xN intermediate layer and the superlattice structure were introduced to serve as the composite stress buffer layer, so that stress in an epitaxial film is controlled effectively, the penetrating dislocation density in a gallium nitride epitaxia layer is reduced, and a crack-free, low-warp
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