Jinmin Li
Chinese Academy of Sciences
10 Papers
53 Citations
Jinmin Li is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Layer (electronics) & Gallium nitride. The author has an hindex of 6, co-authored 10 publications.
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Papers
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD
Weijun Luo,Xiaoliang Wang,L.W. Guo,Hongling Xiao,Cuimei Wang,Junxue Ran,Jianping Li,Jinmin Li +7 more
TL;DR: The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness of HT AlN buffer layer, and the optimized thickness of the HT Aln buffer layer is about 110nm.
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Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD
Weijun Luo,Xiaoliang Wang,Hongling Xiao,Cuimei Wang,Junxue Ran,L.W. Guo,Jianping Li,Hongxin Liu,Yanling Chen,Fuhua Yang,Jinmin Li +10 more
TL;DR: AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (111) substrate using metal-organic chemical vapor deposition (MOCVD) to relieve the tension stress during the growth of GaN epilayers.
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MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate
Xiaoliang Wang,Cuimei Wang,Guoxin Hu,Hongling Xiao,Cebao Fang,Junxi Wang,Junxue Ran,Jianping Li,Jinmin Li,Zhanguo Wang +9 more
TL;DR: In this paper, a high-mobility Al0.3Ga0.7N/AlN/GaN high electron mobility transistors (HEMT) structure has been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate.
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Self-organization of the InGaAs/GaAs quantum dots superlattice
TL;DR: In this paper, the authors investigated the self-organization of quantum dots during the growth of InGaAs/GaAs multilayers on GaAs (1 0 0) and found that the QDs spacing in the first layer can affect the vertical alignment of QDs.
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Patent
Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility
Xiaoliang Wang,Cuimei Wang,Guoxin Hu,Junxi Wang,Jianping Li,Yiping Zeng,Jinmin Li +6 more
- 05 Jul 2006
TL;DR: In this article, an interposed layer of unintentional doping aluminum?C gallium - nitrogen in thin layer prepared on buffer layer of gallium nitride in high-ohmic resistor; a channel layer of GCN in high mobility prepared on the interposition layer of aluminum? C gallium?C nitrogen.
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